Details, datasheet, quote on part number: MRF6402
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionRF Power Transistor NPN Silicon
CompanyMotorola Semiconductor Products
DatasheetDownload MRF6402 datasheet
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Features, Applications

The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has an internally matched input. To be used in Class AB for PCN and Cellular Radio Applications Specified V, 1.88 GHz Characteristics Output Power 4.5 Watts Gain 10 dB Typ Efficiency 45% Typ Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector­Current Continuous Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCER VCBO VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case (1) Symbol RJC Symbol Min Typ Value +150 200 Unit Vdc Adc Watts W/°C °C

Collector­Emitter Breakdown Voltage (IC = 10 mA, RBE 75 ) Emitter­Base Breakdown Voltage (IE = 5 mAdc) Collector­Base Breakdown Voltage (IC = 10 mAdc) Collector­Emitter Leakage (VCE 26 V, RBE 75 ) V(BR)CER V(BR)EBO V(BR)CBO Vdc mA (continued)

ICER (1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted.)

Common­Emitter Amplifier Power Gain (VCC 26 V, Pout 4 W, ICQ = 40 mA, = 1.88 GHz) Collector Efficiency (VCC 26 V, Pout = 1.88 GHz) Load Mismatch (VCC 26 V, Pout 4.5 W, ICQ = 40 mA, = 1.88 GHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Gp No Degradation in Output Power dB %

ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency.

Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCE 26 V, ICQ = 40 mA, Pout 4.5 W

Figure 2. Typical Output Power versus Input Power

to 5 pF, Trimmer Capacitor, Johanson 100A, 68 pF, Chip Capacitor, ATC 100A, 82 pF, Chip Capacitor, ATC 15 nF, Chip Capacitor, 0805 330 pF, Chip Capacitor, 0805 4.7 µF, 35 V, Capacitor Diode, 1N4148

2 Turns, Wire 0.5 mm, 2 mm Ferrite Bead, SMD Fair­Rite 10 k, Trimmer 2.2 , Chip Resistor, 56 , Chip Resistor, W, 5%, Resistor 3 W, Power Resistor Transistor, BD135


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