Details, datasheet, quote on part number: MRF5S9070NR1,
PartMRF5S9070NR1,
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionMRF5S9070NR1, 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs,
CompanyMotorola Semiconductor Products
DatasheetDownload MRF5S9070NR1, datasheet
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Features, Applications

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg., - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain 17.8 dB Drain Efficiency 30% ACPR @ 750 kHz Offset - 47 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Integrated ESD Protection 200°C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

880 MHz, 26 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET

Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 200 Unit Vdc W W/°C °C

Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Value 0.80 0.93 Unit °C/W

Test Methodology Human Body Model (per - A114) Machine Model (per - A115) Charge Device Model (per - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)

Test Methodology Per JESD - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, 200 A) Gate Quiescent Voltage (VDS = 26 Vdc, = 600 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, = 4 Adc) Dynamic Characteristic Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss 1.37 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 10 1 Adc Symbol Min Typ Max Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout 14 W Avg., = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL dB % dBc dB

Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for - 960 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout W, f MHz Power Gain Drain Efficiency Input Return Loss Pout 1 dB Compression Point = 940 MHz) Gps D IRL dB W

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for - 960 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout 25 W Avg., f MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM dB % dBc (continued)

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for - 895 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout W, f MHz Power Gain Drain Efficiency Input Return Loss Pout 1 dB Compression Point = 880 MHz) Gps D IRL dB W

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for - 895 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout 25 W Avg., f MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM dB % dBc


 

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