Details, datasheet, quote on part number: MRF5S21130HR3
Description2170 Mhz, 28 W AVG., 28 V, 2 X W–CDMA, Lateral N–Channel RF Power MOSFET
CompanyMotorola Semiconductor Products
DatasheetDownload MRF5S21130HR3 datasheet
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Features, Applications

Designed for W - CDMA base station applications at frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat s. To applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. @ 0.01% Probability on CCDF. Power Gain 13.5 dB Efficiency @ 10 MHz Offset - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset - 39 dBc @ 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched, Controlled Q, for Ease of Use Qualified to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40 Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 200 92 Unit Vdc W W/C C W

Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Value 0.44 0.47 Unit C/W

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M4 (Minimum) C7 (Minimum)

Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 300 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, = 1200 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, = 3 Adc) Forward Transconductance (VDS = 10 Vdc, = 3 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 2.6 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 10 1 Adc Symbol Min Typ Max Unit

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout 28 W Avg., = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. Peak/Avg. @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss (1) Part is internally matched both on input and output. Gps D IM3 ACPR IRL dB % dBc dB

MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2

x 0.083 Microstrip x 0.083 Microstrip x 0.083 Microstrip x 1.024 Microstrip x 1.024 Microstrip x 0.083 Microstrip x 1.000 Microstrip

x 0.083 Microstrip x 1.000 Microstrip x 0.083 Microstrip x 0.083 Microstrip x 0.220 Microstrip x 0.083 Microstrip Taconic = 2.55

Table 1. MRF5S21130HR3(HSR3) Test Circuit Component Designations and Values

Part R1, R2 Description 10 F, 35 V Tantalum Capacitors 220 nF Chip Capacitors pF 100B Chip Capacitors pF 100B Chip Capacitor pF 100B Chip Capacitor 220 F, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Part Number 100B0R5BW 13668221 Manufacturer Vishay - Sprague Vishay - Vitramon ATC Philips


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