Details, datasheet, quote on part number: MRF5S21130HR3
PartMRF5S21130HR3
Category
Description2170 Mhz, 28 W AVG., 28 V, 2 X W–CDMA, Lateral N–Channel RF Power MOSFET
CompanyMotorola Semiconductor Products
DatasheetDownload MRF5S21130HR3 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Designed for W - CDMA base station applications at frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat s. To applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. @ 0.01% Probability on CCDF. Power Gain 13.5 dB Efficiency @ 10 MHz Offset - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset - 39 dBc @ 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched, Controlled Q, for Ease of Use Qualified to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40 Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

2170 MHz, 28 W AVG., 28 CDMA LATERAL N - CHANNEL RF POWER MOSFETs

Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 200 92 Unit Vdc W W/C C W

Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Value 0.44 0.47 Unit C/W

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M4 (Minimum) C7 (Minimum)

Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 300 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, = 1200 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, = 3 Adc) Forward Transconductance (VDS = 10 Vdc, = 3 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 2.6 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 10 1 Adc Symbol Min Typ Max Unit

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout 28 W Avg., = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. Peak/Avg. @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss (1) Part is internally matched both on input and output. Gps D IM3 ACPR IRL dB % dBc dB

MRF5S21130HR3 MRF5S21130HSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2

x 0.083 Microstrip x 0.083 Microstrip x 0.083 Microstrip x 1.024 Microstrip x 1.024 Microstrip x 0.083 Microstrip x 1.000 Microstrip

x 0.083 Microstrip x 1.000 Microstrip x 0.083 Microstrip x 0.083 Microstrip x 0.220 Microstrip x 0.083 Microstrip Taconic = 2.55

Table 1. MRF5S21130HR3(HSR3) Test Circuit Component Designations and Values

Part R1, R2 Description 10 F, 35 V Tantalum Capacitors 220 nF Chip Capacitors pF 100B Chip Capacitors pF 100B Chip Capacitor pF 100B Chip Capacitor 220 F, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Part Number 100B0R5BW 13668221 Manufacturer Vishay - Sprague Vishay - Vitramon ATC Philips


 

Related products with the same datasheet
MRF5S21130HSR3
Some Part number from the same manufacture Motorola Semiconductor Products
MRF5S21130HSR3 2170 Mhz, 28 W AVG., 28 V, 2 X W–CDMA, Lateral N–Channel RF Power MOSFET
MRF5S21130R3 MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
MRF5S21150 MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 Mhz, 33 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
MRF5S9070NR1 880 Mhz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
MRF6401 RF Linear Power Transistor
MRF6401PHOTOMASTER NPN Silicon RF Power Transistor
MRF6401PHT RF Linear Power Transistor
MRF6402 RF Power Transistor NPN Silicon
MRF6404 MRF6404 30 W, 1.88 GHZ RF Power Transistor - Archived
MRF6408 RF Power Transistor NPN Silicon
MRF6409 MRF6409 960 Mhz, 20 W, 26 V RF Power Transistor - Archived
MRF641 RF Power Transistor NPN Silicon
MRF6414 MRF6414 960 Mhz, 50 W, 26 V RF Power Transistor - Archived
MRF6414PHT RF Power Transistor NPN Silicon
MRF644
MRF650
MRF652 RF Power Transistors NPN Silicon
MRF6522-060 MRF6522-60 RF Power Transistor
MRF6522-070 MRF6522-70, MRF6522-70R3 921-960 Mhz, 70 W, 26 V Lateral N-channel RF Power MOSFETs
MRF6522-10
MRF6522-10R1 MRF6522-10R1 960 Mhz, 10 W, 26 V Lateral N-channel RF Power MOSFET

1N988B : 500 Milliwatts Glass Silicon Zener Diode

CWDEVSYS908AZ60A :

MC74ACT620N : Octal Bidirectional Transceiver With 3-state Outputs

MCF52274CLU120 : MCF5227x ColdFire Microprocessor Data Sheet The following table compares the various device derivatives available within the MCF5227x family.

MPC5534AVZ80 : Microcontroller

MC68HC811F1FU3 : 16-bit Device Composed of Standard On-chip Peripheral Modules Connected by an Intermodule bus. Modules Include

BZX83C56 : 500 mW Do-35 Glass Zener Voltage Regulator Diodes

SN54LS797J : Tri-state Octal Buffers

MMA7361LCR2 : 1.5g, 6g Three Axis Low-g Micromachined Accelerometer The MMA7361LC is a low power, low profile capacitive micromachined accelerometer featuring signal conditioning, a 1-pole low pass filter, temperature compensation, self test, 0g-Detect which detects linear freefall, and g-Select which

Same catergory

17-21/W1D-P2R1/TR8 : . Technical Data Sheet 0805 Package White Chip LED Package in 8mm tape on 7diameter reel. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. Mono-color type. The 17-21 SMD Taping is much smaller than lead frame type components, thus enable smaller board size, higher packing density, reduced storage.

APCC02-41CGKWA : Material: Ingaaip , Wavelength: 570nm. The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode. !I.C. COMPATIBLE !MECHANICALLY RUGGED. !GRAY FACE,WHITE SEGMENT. ! PACKAGE 1000PCS / REEL. Notes: 1. All dimensions are in millimeters (inches), Tolerance is 0.25(0.01")unless otherwise noted. 2. s are subject to change whitout notice. N o. Dic m A Min. APCC02-41CGKWA.

APT6025BLL : 600V, 24A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.

PTF10053 : 12 Watts, 2.0 GHZ Goldmos Field Effect Transistor. The PTF a 12watt GOLDMOS FET intended for large signal applications from to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Guaranteed Performance at 1.99 GHz, V - Output Power = 12 Watts Min - Power Gain 12 dB Typ Full Gold Metallization.

UF730-TA3-T : 5.5a, 400v, 1.0 OHM, N-channel Power Mosfet. The UF730 power MOSFET is designed for high voltage, high speed power switching applications such as switching power suppliess, switching adaptors. 5.5A, 400V, Low RDS(ON)(1.0) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Order Number Package Normal Lead Free Plating UF730L-TF3-T TO-220F Note: Pin Assignment:.

FW26025A1 : PNP Power Darlington Transistor. APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT The is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. Symbol V CBO V CEO V EBO IB P tot T stg Tj Parameter Collector-Base Voltage = 0) Collector-Emitter.

1SMA28CAT3G : 400 Watt Peak Power Zener Transient Voltage Suppressors. 1SMA10CAT3 Series 400 Watt Peak Power Zener Transient Voltage Suppressors The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA series is supplied in ON Semiconductor's exclusive,.

ANT-433-CW-HW : Rf Antenna Rf/if And Rfid; ANTENNA 433MHZ 1/4WAV WHIP RPSMA. s: Frequency: 433MHz ; Number of Bands: 1 ; Mounting Type: Connector ; Packaging: Bulk ; VSWR: 2 ; Antenna Type: Whip: 1/4 Wave, Fixed ; Height (Max): 4.72" (120mm) ; Termination: RP-SMA ; Gain: - ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

DFLS1200-7 : Schottky (Diodes & Rectifiers) SCHOTTKY RECTIFIER. s: Manufacturer: Diodes Inc. ; Product Category: Schottky (Diodes & Rectifiers) ; RoHS:  Details ; Product: Schottky Diodes ; Peak Reverse Voltage: 200 V ; Forward Continuous Current: 1 A ; Max Surge Current: 40 A ; Configuration: Single ; Forward Voltage Drop: 0.85 V ; Maximum Reverse Leakage.

1762460 : Through Hole Terminal Block - Headers, Plug And Socket Connectors, Interconnect Header, Male Pins, Shrouded (4 Side); CONN HEADER 5.08MM 11POS. s: Terminal Block Type: Header, Male Pins, Shrouded (4 Side) ; Positions Per Level: 11 ; Pitch: 0.200" (5.08mm) ; Number of Levels: 2 ; Header Orientation: 90, Right Angle ; Plug Wire Entry: - ; Termination:.

AB972 : D-sub, D-shaped - Accessory Connectors, Interconnect Jumper Box; JUMPER BOX DB25 MALE/DB25 FEMALE. s: Accessory Type: Jumper Box ; : RS232 ; For Use With/Related Products: D-Sub Connectors ; Number of Positions: 25 ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant.

PCA9559PW,112 : Interface - Specialized Integrated Circuit (ics) Tube 3 V ~ 3.6 V; IC I2C EEPROM 6BIT DIPSW 20TSSOP. s: Applications: PC's, PDA's ; Interface: I²C ; Voltage - Supply: 3 V ~ 3.6 V ; Package / Case: 20-TSSOP (0.173", 4.40mm Width) ; Packaging: Tube ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

811-22-054-30-000101 : Gold Surface Mount Rectangular - Spring Loaded Connectors, Interconnect Surface Mount; CONN SPRING CONT 54 POS .137 SMD. s: Material: Copper Alloy ; Mounting Type: Surface Mount ; Number of Contacts: 54 ; Number of Rows: 1 ; Pitch: 0.100" (2.54mm) ; Contact Finish: Gold ; Contact Finish Thickness: 20in (0.51m) ; Connector Type: Piston ; Row Spacing:.

WHAR50FET : 0.5 Ohm 0.5W, 1/2W Through Hole Resistors; RES .50 OHM 1/2W 1% WW AXIAL. s: Resistance (Ohms): 0.5 ; Power (Watts): 0.5W, 1/2W ; Tolerance: 1% ; Packaging: Cut Tape (CT) ; Composition: Wirewound ; Temperature Coefficient: 20ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

RT1206BRD072K49L : 2.49K Ohm 0.25W, 1/4W Chip Resistor - Surface Mount; RES 2.49K OHM 1/4W .1% SMD 1206. s: Resistance (Ohms): 2.49K ; Power (Watts): 0.25W, 1/4W ; Tolerance: 0.1% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 25ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

DEME9PZNMBK52 : Gold Panel Mount; Through Hole D-sub Connectors, Interconnect Plug, Male Pins; DSUB 9 PCB CLIN NMB G50. s: Connector Type: Plug, Male Pins ; Contact Finish: Gold ; : - ; Flange Feature: Board Side (4-40) ; Mounting Type: Panel Mount; Through Hole ; Number of Positions: 9 ; Number of Rows: 2 ; Termination: Solder ; Contact Finish Thickness: 50in (1.27m).

20926410102 : PT 86 (HT) UHF TRANSPONDER. s: Family: RFID Transponders, Tags ; Series: - ; Packaging: * ; RF Type: Read / Write ; Frequency: 860MHz ~ 960MHz ; : EPC C1G2 / ISO18000-6C ; Package / Case: * ; Supplier Device Package: * ; Dynamic Catalog: Ha-VIS PT 86 (HT).

URS1H470MDD1AC : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 47 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 47 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Leakage Current: 70.5 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40.

1050541-1 : CABLE TERMINATED, MALE, SMA CONNECTOR, SOLDER, PLUG. s: Connector Type: SMA ; Gender: Male ; Termination Types: SOLDER ; RoHS Compliant: RoHS.

92MMBX-S50-0-1/111NE : BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER, JACK. s: Applications: RF and Microwave Connectors ; Gender: Female ; Termination Types: SOLDER.

 
0-C     D-L     M-R     S-Z