Details, datasheet, quote on part number: MRF5S21130
PartMRF5S21130
CategoryRF & Microwaves => Transistors => FETs => MOSFETs => Power
TitlePower
DescriptionMRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
CompanyMotorola Semiconductor Products
DatasheetDownload MRF5S21130 datasheet
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Features, Applications

MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N­Channel Enhancement­Mode Lateral MOSFETs MRF5S21130S Designed for W­CDMA base station applications at frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line

s. To applications. Typical 2­carrier W­CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, = 2135 MHz, = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz f1 ­5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz f1 ­10 MHz and f2 +10 MHz, Peak/Avg. @ 0.01% Probability on CCDF. Output Power 28 Watts Avg. Power Gain 13.5 dB Efficiency IM3 ­37 dBc ACPR ­39 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large­Signal Impedance Parameters Qualified to a Maximum of 32 VDD Operation Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 2 x W­CDMA, 28 V LATERAL N­CHANNEL RF POWER MOSFETs

Rating Drain­Source Voltage Gate­Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 200 92 Unit Vdc Watts W/°C °C Watts

Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC 0.54 0.56 Max Unit °C/W

NOTE ­ CAUTION ­ MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M4 (Minimum) C7 (Minimum)

Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate­Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 300 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, = 1200 mAdc) Drain­Source On­Voltage (VGS = 10 Vdc, = 3 Adc) Forward Transconductance (VDS = 10 Vdc, = 3 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ħ 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 2.6 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 10 1 µAdc Symbol Min Typ Max Unit

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2­carrier W­CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. @ 0.01% Probability on CCDF. Common­Source Amplifier Power Gain (VDD = 28 Vdc, Pout 28 W Avg., IDQ = 1200 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout 28 W Avg., IDQ = 1200 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout 28 W Avg., IDQ = 1200 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz; IM3 measured over 3.84 MHz f1 ­10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout 28 W Avg., IDQ = 1200 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz; ACPR measured over 3.84 MHz f1 ­5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout 28 W Avg., IDQ = 1200 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) (1) Part is internally matched both on input and output. Gps 13.5 dB


x 0.083 Microstrip x 0.083 Microstrip x 0.083 Microstrip x 1.024 Microstrip x 1.024 Microstrip x 0.083 Microstrip x 1.000 Microstrip

x 0.083 Microstrip x 1.000 Microstrip x 0.083 Microstrip x 0.083 Microstrip x 0.220 Microstrip x 0.083 Microstrip Taconic = 2.55

Table 1. MRF5S21130 Test Circuit Component Designations and Values

Part R1, R2 Description 10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitors pF 100B Chip Capacitors pF 100B Chip Capacitor pF 100B Chip Capacitor 220 µF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Value, P/N or DWG 100B0R5BW 13668221 Manufacturer Vishay­Sprague Vishay­Vitramon ATC Philips


 

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