|Category||RF & Microwaves => Transistors => FETs => MOSFETs => Power|
|Description||MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 Mhz, 23 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF5S21100L datasheet
Designed for WCDMA base station applications with frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat s. To applications. Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1050 mA, = 2135 MHz, = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz f1 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz f1 10 MHz and f2 +10 MHz, Peak/Avg. @ 0.01% Probability on CCDF. Output Power 23 Watts Avg. Power Gain 13.5 dB Efficiency IM3 37 dBc ACPR 40 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent LargeSignal Impedance Parameters Qualified to a Maximum of 32 VDD Operation Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal. MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 2002170 MHz, 23 W AVG., 2 x WCDMA, 28 V LATERAL NCHANNEL RF POWER MOSFETs
Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Max 0.70 0.76 Unit °C/W
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum)
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, = 250 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, = 1050 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, = 2.5 Adc) Forward Transconductance (VDS = 10 Vdc, = 2.5 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ħ 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 2.14 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 1 0.5 µAdc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2carrier WCDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. @ 0.01% Probability on CCDF. CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout 23 W Avg., IDQ = 1050 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout 23 W Avg., IDQ = 1050 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout 23 W Avg., IDQ = 1050 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz; IM3 measured over 3.84 MHz f1 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout 23 W Avg., IDQ = 1050 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz; ACPR measured over 3.84 MHz f1 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout 23 W Avg., IDQ = 1050 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) (1) Part is internally matched both on input and output. Gps 13.5 dB
x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.643 Microstrip x 0.643 Microstrip x 0.048 Microstrip x 0.048 Microstrip x 1.136 Microstrip
x 1.136 Microstrip x 0.393 Microstrip x 0.220 Microstrip x 0.142 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.099 Microstrip x 0.080 Microstrip Arlon GX0300SS22, 30 mil, = 2.55Table 1. MRF5S21100L Test Circuit Component Designations and Values
Part R4 W1 Short RF Bead 8.2 pF Chip Capacitors, B Case 5.6 pF Chip Capacitor, B Case 0.1 µF Chip Capacitor, B Case 7.5 pF Chip Capacitors, B Case 1.2 pF Chip Capacitor, B Case 1K pF Chip Capacitor, B Case 0.56 µF Chip Capacitors, B Case 470 µF, 63 V Electrolytic Capacitor 100 µF, 50 V Electrolytic Capacitor 0.64.5 pF Gigatrim Variable Capacitor 2.7 pF Chip Capacitor, B Case 0.42.5 pF Gigatrim Variable Capacitor Description Value, P/N or DWG RM73B2B120JT 14 Gauge Jumper Wire Manufacturer Newark ATC Kemet ATC Kemet Newark ATC Newark Garrett ElectronicsW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors
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