Details, datasheet, quote on part number: MRF5S21100H
PartMRF5S21100H
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionMRF5S21100HSR3 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB for PCN - PCS/cel lular radi o and WLL
applications.
• Typical 2 -carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA,
Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CompanyMotorola Semiconductor Products
DatasheetDownload MRF5S21100H datasheet
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Features, Applications

Designed for W- CDMA base station applications with frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat s. To applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR @ 0.01% Probability on CCDF. Power Gain 13.5 dB Drain Efficiency @ 10 MHz Offset - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset - 40 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40 Nominal. RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

- 2170 MHz, 23 W AVG., 28 CDMA LATERAL N - CHANNEL RF POWER MOSFETs

Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value +150 200 Unit Vdc W W/°C °C

Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Value 0.57 0.64 Unit °C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, = 250 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, = 1050 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, = 2.5 Adc) Forward Transconductance (VDS = 10 Vdc, = 2.5 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 2.14 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 1 0.5 Adc Symbol Min Typ Max Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout 23 W Avg., = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL dB % dBc dB

x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.643 Microstrip x 0.643 Microstrip x 0.048 Microstrip x 0.048 Microstrip x 1.136 Microstrip

Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values

Part R3, R4 Short RF Bead 8.2 pF Chip Capacitors 5.6 pF Chip Capacitor 0.1 F Chip Capacitor 7.5 pF Chip Capacitors 1.2 pF Chip Capacitor 1K pF Chip Capacitor 0.56 F Chip Capacitors 63 V Electrolytic Capacitor 50 V Electrolytic Capacitor 4.5 pF Gigatrim Variable Capacitor 2.7 pF Chip Capacitor 2.5 pF Gigatrim Variable Capacitor 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Description CR1206564JT RM73B2B120JT Part Number Manufacturer Newark ATC Kemet ATC Kemet Newark ATC Newark Garrett Electronics


 

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