|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel|
|Description||MRF5S21045MBR1 2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF5S21045 datasheet
|Some Part number from the same manufacture Motorola Semiconductor Products|
|MRF5S19150H MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs|
|MRF5S19100H MRF5S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs|
|MRF5S19090H MRF5S19090HSR3 1930-1990 MHz, 18 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs,|
|MRF21125 MRF21125SR3 2110-2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs|
|MRF21090 Designed for W-CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierapplications.• Typical W-CDMA Performance for 2140 MHz,|
|MRF21045 RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for TDMA, CDMA and multicarrier|
|MRF21030 MRF21030LSR3 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET|
|MRF21010 MRF21010LSR1 2110-2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs|
|MRF18060AL 1805–1880 MHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs SUBSCRIBE The MRF18060ALR3 and MRF18060ALSR3 are designed for PCN and PCS base station applications with frequencies|
|MRF18060BL 1930–1990 MHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs SUBSCRIBE The MRF18060BLR3 and MRF18060BLSR3 are designed for PCN and PCS base station applications with frequencies from 1800|
|MRF18085AL 1805–1880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N–Channel RF Power MOSFETs SUBSCRIBE The MRF18085ALR3 and MRF18085ALSR3 are designed for GSM and GSM EDGE base station applications|
|MRF18085BL 1930–1990 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N–Channel RF Power MOSFETs The MRF18085BLR3 and MRF18085BLSR3 are designed for GSM and EDGE base station applications with frequencies from 1930 to 1990|
|MRF21060L 2110–2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFETsThe MRF21060LR3 and MRF21060LSR3 are designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W–CDMA,|
|MRF21085L 2110–2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFETs The MRF21085LR3 and MRF21085LSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,|
|MRF6S18100N The MRF6S18100NR1 and MRF6S18100NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.|
|MRF6S19060N 1930–1990 MHz, 12 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFETsThe MRF6S19060NR1 and MRF6S19060NBR1 are designed for N–CDMA base station applications with frequencies from 1930 to 1990|
|MRF6S20010N The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose|
|MRF6S21050L The MRF6S21050L is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular|
|MRF6S21060N 2110–2170 MHz, 14 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFETs The MRF6S21060NR1 and MRF6S21060NBR1 are designed for W–CDMA base station applications with frequencies from 2110 to 2170|
|MC56F8367 56F8367/56F8167 Features1.1.1 Core• Efficient 16-bit 56800E family controller engine with dual Harvard architecture• Up to 60 Million Instructions Per Second (MIPS) at 60MHz core frequency• Single-cycle|
|MC56F8357 Core• Efficient 16-bit 56800E family controller engine with dual Harvard architecture• Up to 60 Million Instructions Per Second (MIPS) at 60 MHz core frequency• Single-cycle 16 × 16-bit parallel|
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