|Category||Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel|
|Description||MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF5S19150H datasheet
Designed for PCN and PCS base station applications at frequencies from to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR @ 0.01% Probability on CCDF. Power Gain 13 dB Drain Efficiency @ 2.5 MHz Offset - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified to a Maximum 32 V Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40 Nominal. RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.1930- 1990 MHz, 26 W AVG., 28 CDMA LATERAL N - CHANNEL RF POWER MOSFETs
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation = 25°C Derate above 25°C Symbol VDSS VGS PD Tstg TJ CW Value to Unit Vdc W W/°C °C W W/°C
Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Value 0.40 0.46 Unit °C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M4 (Minimum) C7 (Minimum)Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, = 1200 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, = 3 Adc) Forward Transconductance (VDS = 10 Vdc, = 3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 2.7 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 10 1 Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout 26 W Avg., = 1930 MHz, = 1932.5 MHz and = 1987.5 MHz, = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps D IM3 ACPR IRL dB % dBc dB
x 0.085 Microstrip x 0.085 Microstrip x 0.085 Microstrip x 0.085 Microstrip x 0.085 Microstrip x 0.160 Taper x 0.955 Microstrip x 0.955 Microstrip x 0.955 Microstrip x 0.046 Microstrip x 1.080 MicrostripTable 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values
Part R3, R4 Description Short RF Bead 0.8 pF Chip Capacitor 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor 1.7 pF Chip Capacitor 9.1 pF Chip Capacitors 25 V Tantalum Capacitors 50 V Electrolytic Capacitor 0.1 F Chip Capacitors 1000 pF Chip Capacitors 8.2 pF Chip Capacitors 35 V Tantalum Capacitors 63 V Electrolytic Capacitor 6.2 pF Chip Capacitor 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Part Number 564JT RM73B2B120JT Manufacturer Newark ATC Newark ATC Newark Kemet ATC Newark ATC Newark Garrett Electtonics
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|MRF18060BL 1930–1990 MHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs SUBSCRIBE The MRF18060BLR3 and MRF18060BLSR3 are designed for PCN and PCS base station applications with frequencies from 1800|
|MRF18085AL 1805–1880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N–Channel RF Power MOSFETs SUBSCRIBE The MRF18085ALR3 and MRF18085ALSR3 are designed for GSM and GSM EDGE base station applications|
|MRF18085BL 1930–1990 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N–Channel RF Power MOSFETs The MRF18085BLR3 and MRF18085BLSR3 are designed for GSM and EDGE base station applications with frequencies from 1930 to 1990|
|MRF21060L 2110–2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFETsThe MRF21060LR3 and MRF21060LSR3 are designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W–CDMA,|
|MRF21085L 2110–2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFETs The MRF21085LR3 and MRF21085LSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,|
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|MRF6S19060N 1930–1990 MHz, 12 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFETsThe MRF6S19060NR1 and MRF6S19060NBR1 are designed for N–CDMA base station applications with frequencies from 1930 to 1990|
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|MRF6S21050L The MRF6S21050L is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular|
|MRF6S21060N 2110–2170 MHz, 14 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFETs The MRF6S21060NR1 and MRF6S21060NBR1 are designed for W–CDMA base station applications with frequencies from 2110 to 2170|
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