|Category||RF & Microwaves => Transistors => FETs => MOSFETs => Power|
|Description||MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 Mhz, 32 W, 28 V Lateral N-channel RF Power MOSFETs|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF5S19150 datasheet
MRF5S19150 RF Power Field Effect Transistors MRF5S19150R3 NChannel EnhancementMode Lateral MOSFETs MRF5S19150S Designed for PCN and PCS base station applications at frequencies from H z. CDMA and multic arrier amplifier
applications. Typical 2Carrier NCDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, = 1958.75 MHz, = 1961.25 MHz IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth f1 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth f1 2.5 MHz and f2 +2.5 MHz. Peak/Avg. @ 0.01% Probability on CCDF. Output Power 32 Watts Avg. Power Gain 14 dB Efficiency 26% ACPR IM3 36.5 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, = 1960 MHz, 100 Watts CW Output Power Excellent Thermal Stability Qualified to a Maximum 32 V Operation Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1990 MHz, 28 V LATERAL NCHANNEL RF POWER MOSFETs
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 200 100 Unit Vdc Watts W/°C °C Watts
Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC 0.49 0.53 Max Unit °C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 360 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, = 1400 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, = 3.6 Adc) Forward Transconductance (VDS = 10 Vdc, = 3.6 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 1 MHz) Crss 3.1 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 10 1 µAdc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2Carrier NCDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg @ 0.01% Probability on CCDF. CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout 32 W Avg, IDQ = 1400 mA, = 1930 MHz, = 1932.5 MHz and = 1987.5 MHz, = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout 32 W Avg, IDQ = 1400 mA, = 1930 MHz, = 1932.5 MHz and = 1987.5 MHz, = 1990 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout 32 W Avg, IDQ = 1400 mA, = 1930 MHz, = 1932.5 MHz and = 1987.5 MHz, = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth f1 2.5 MHz and f2 +2.5 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout 32 W Avg, IDQ = 1400 mA, = 1930 MHz, = 1932.5 MHz and = 1987.5 MHz, = 1990 MHz; ACPR measured over 30 kHz Bandwidth f1 885 MHz and f2 +885 MHz) Input Return Loss (VDD = 28 Vdc, Pout 32 W Avg, IDQ = 1400 mA, = 1930 MHz, = 1932.5 MHz and = 1987.5 MHz, = 1990 MHz) (1) Part is internally matched both on input and output. Gps 14 dB
x 0.082 Microstrip x 0.082 Microstrip x 0.082 Microstrip x 0.082 Microstrip x 0.084 Microstrip x 0.237 Microstrip Taper x 1.030 Microstrip x 0.046 Microstrip
x 0.046 Microstrip x 1.055 Microstrip x 0.068 Microstrip x 0.068 Microstrip x 1.055 Microstrip x 0.105 Microstrip x 0.082 Microstrip Arlon = 2.55Table 1. MRF5S19150 Test Circuit Component Designations and Values
Part R3, R4 Short RF Beads 4.5 Variable Capacitors, Gigatrim 0.8 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1.0 µF, 50 V SMT Tantalum Capacitors 0.1 µF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 100 µF, 50 V Electrolytic Capacitor 470 µF, 63 V Electrolytic Capacitor 22 µF, 35 V Tantalum Capacitors 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Description
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