|Category||RF & Microwaves => Transistors => FETs => MOSFETs => Power|
|Description||MRF5P20180R6 1990 Mhz, 38 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFET|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF5P20180R6 datasheet
Designed for WCDMA base station applications with frequencies from to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCNPCS/cellular radio and WLL applications. Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ x 800 mA, = 1955 MHz, = 1965 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz 5 MHz and + 5 MHz. Distortion Products Measured over a 3.84 MHz 10 MHz and + 10 MHz, Each Carrier Peak/Avg. @ 0.01% Probability on CCDF. Output Power 38 Watts Avg. Power Gain 14 dB Efficiency IM3 37.5 dBc ACPR 41 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent LargeSignal Impedance Parameters Qualified to a Maximum of 32 VDD Operation In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.1990 MHz, 38 W AVG., 2 x WCDMA, 28 V LATERAL NCHANNEL RF POWER MOSFET
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 200 120 Unit Vdc Watts W/°C °C Watts
Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Max 0.43 Unit °C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum)
Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) GateSource Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, = 200 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, = 850 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, = 2 Adc) Forward Transconductance (VDS = 10 Vdc, = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 1.7 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S IDSS IGSS 10 1 µAdc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2carrier WCDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. @ 0.01% Probability on CCDF. CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 800 mA, = 1932.5 MHz, = 1942.5 MHz and = 1977.5 MHz, = 1987.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 800 mA, = 1932.5 MHz, = 1942.5 MHz and = 1977.5 MHz, = 1987.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 800 mA, = 1932.5 MHz, = 1942.5 MHz and = 1977.5 MHz, = 1987.5 MHz; IM3 measured over 3.84 MHz f1 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 800 mA, = 1932.5 MHz, = 1942.5 MHz and = 1977.5 MHz, = 1987.5 MHz; ACPR measured over 3.84 MHz 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 800 mA, = 1932.5 MHz, = 1942.5 MHz and = 1977.5 MHz, = 1987.5 MHz) Gps 14 dB
(1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in pushpull configuration.
x 1.126 Microstrip x 0.138 Microstrip x 0.091 Microstrip x 0.117 Microstrip x 0.874 Microstrip x 2.269 Microstrip x 0.118 Microstrip x 0.079 Microstrip
x 0.945 Microstrip x 0.913 Microstrip x 0.823 Microstrip x 1.057 Microstrip x 0.046 Microstrip x 0.126 Microstrip x 0.793 Microstrip Taconic = 2.55
Figure 1. MRF5P20180 Test Circuit Schematic Table 1. MRF5P20180 Test Circuit Component Designations and Values
Part R3, R4 Description pF 100B Chip Capacitor pF 100B Chip Capacitors pF 100B Chip Capacitors nF 200B Chip Capacitors 22 µF, 35 V Tantalum Capacitors 220 µF, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Value, P/N or DWG TAJE226M035 13668221 Manufacturer ATC AVX Philips
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