|Category||RF & Microwaves => Transistors => FETs => MOSFETs => Power|
|Description||MRF374A 470-860 Mhz, 130 W, 32 V Lateral N-channel Broadband RF Power MOSFET|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF374A datasheet
Designed for broadband commercial and industrial applications with frequencies from to 860 MHz. The high gain and broadband performance of this device make it ideal for largesignal, common source amplifier applications in 28/32 volt transmitter equipment. Typical TwoTone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power 130 Watts PEP Power Gain 17.3 dB Efficiency 41% IMD 32.5 dBc 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 130 Watts, = 857 MHz, = 863 MHz Integrated ESD Protection Excellent Thermal Stability Characterized with Differential LargeSignal Impedance Parameters 860 MHz, 32 V LATERAL NCHANNEL BROADBAND RF POWER MOSFET
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 200 Unit Vdc Watts W/°C °CTest Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.58 Unit °C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Characteristic OFF CHARACTERISTICS (1) DrainSource Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 200 µA) Gate Quiescent Voltage (VDS = 100 mA) DrainSource OnVoltage (VGS 3 A) DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS 32 V, VGS = 1 MHz) Output Capacitance (VDS 32 V, VGS = 1 MHz) Reverse Transfer Capacitance (VDS 32 V, VGS = 1 MHz) Ciss Coss Crss 1.91 pF VGS(th) VGS(Q) VDS(on) Vdc V(BR)DSS IDSS IGSS 70 1 Vdc µAdc Symbol Min Typ Max Unit
FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF374A Narrowband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 Vdc, Pout 130 W PEP, IDQ x 200 mA, = 857 MHz, = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout 130 W PEP, IDQ x 200 mA, = 857 MHz, = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout 130 W PEP, IDQ x 200 mA, = 857 MHz, = 863 MHz) Load Mismatch (VDD = 32 Vdc, Pout 130 W TwoTone, IDQ x 200 mA, = 857 MHz, = 863 MHz, VSWR 10:1 at All Phase Angles of Test) Gps 17.3 dB
TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF374 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout 100 W PEP, IDQ = 750 mA, = 857 MHz, = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout 100 W PEP, IDQ = 750 mA, = 857 MHz, = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout 100 W PEP, IDQ = 750 mA, = 857 MHz, = 863 MHz) (1) Each side of device measured separately. (2) Measured in pushpull configuration. Gps 15.8 dB
Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted.Figure 1. MRF374A Narrowband Test Circuit Component Layout
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