Details, datasheet, quote on part number: MRF3094
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionMicrowave Linear Power Transistors
CompanyMotorola Semiconductor Products
DatasheetDownload MRF3094 datasheet
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Features, Applications

Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz Characteristics Output Power 0.8, 1.6 Watts Gain ­ 12 dB Low Parasitic Microwave Stripline Package Gold Metallization Diffused Emitter Ballast Resistors Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Rating Collector Base Voltage Emitter Base Voltage Collector Emitter Voltage Collector Current Operating Junction Temperature Storage Temperature MRF3094, 3095 Symbol VCES VEBO VCEO IC TJ Tstg Limit to +150 Unit Vdc Adc °C

Max Ch Characteristic i Thermal Resistance, Junction to Case b l Symbol RJC U i Unit °C/W

Collector­Emitter Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 0.25 mA) Collector Base Breakdown Voltage (IC = 1.0 mA) Collector­Emitter Breakdown Voltage (IC = 10 mA) Collector Cutoff Current (VCB 28 V) V(BR)CES MRF3094, MRF3095 V(BR)EBO MRF3094, MRF3095 V(BR)CBO MRF3094, MRF3095 V(BR)CEO MRF3094, MRF3095 ICBO MRF3095 0.25 mAdc 22 Vdc 45 Vdc 3.5 Vdc 50 Vdc

Output Capacitance (VCB = 1.0 MHz) Cob MRF3094, MRF3095 GPE dB No degradation in output power dB pF

Functional Tests (VCE = 120 mA, = 1.6 GHz) (VCE = 120 mA, = 1.6 GHz) Output Load Mismatch (VCE = 120 mA, = 1.6 GHz, Load VSWR = :1) (VCE = 120 mA, = 1.6 GHz, Load VSWR = :1) Gain Linearity (VCE = 120 mA, = 1.6 GHz, = 0.5 mW) (VCE = 120 mA, = 1.6 GHz, = 0.8 mW)

*ZOL = Conjugate of the optimum load impedance into which the *ZOL = device output operates at a given output power, voltage and *ZOL = power.

Figure 1. Output Power versus Input Power
Figure 2. Series Equivalent Input and Output Impedance


Some Part number from the same manufacture Motorola Semiconductor Products
MRF3095 Microwave Linear Power Transistors
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MRF314 NPN Silicon RF Power Transistor
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MRF327 NPN Silicon RF Power Transistor
MRF329 Broadband RF Power Transistor NPN Silicon
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MRF373ASR1 MRF373AR1, MRF373ALSR1 470-860 Mhz, 75 W, 32 V Lateral N-channel Broadband RF Power MOSFETs
MRF373LSR1 MRF373R1, MRF373SR1 470-860 Mhz, 60 W, 28 V Lateral N-channel Broadband RF Power MOSFET

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