Details, datasheet, quote on part number: MRF3010
PartMRF3010
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionLateral N-channel Broadband RF Power MOSFET
CompanyMotorola Semiconductor Products
DatasheetDownload MRF3010 datasheet
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Features, Applications

W, 1.6 GHz, 28 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET

Designed for IMARSAT satellite up link to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. D Guaranteed Performance @ 1.6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain @ 10 Watts Minimum Efficiency Watts High Gain, Rugged Device Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances Broadband Performance of This Device Makes It Ideal for Applications from to 1700 MHz, Common­Source Class AB Operation. Typical Performance at Class A Operation: Pout = 2 Watts, VDD = 28 Volts, IDQ 1 A, Gain = 12.5 dB, IMD = ­32 dB Capable of Handling 30:1 VSWR, @ 28 Vdc Circuit Board Available Upon Request by Contacting RF Tactical Marketing in Phoenix, AZ

Rating Drain­Source Voltage Gate­Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value +150 200 Unit Vdc °C

Drain­Source Breakdown Voltage (VGS = 1 µA) Zero Gate Voltage Drain Current (VDS 28 V, VGS = 0) Gate­Source Leakage Current (VGS 20 V, VDS = 0) V(BR)DSS IDSS IGSS Vdc µAdc

NOTE ­ CAUTION ­ MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

ELECTRICAL CHARACTERISTICS ­ continued (TC = 25°C unless otherwise noted)

Gate Threshold Voltage (VDS = 50 mA) Drain­Source On­Voltage (VGS 1 A) Forward Transconductance (VDS 1 A) VGS(th) VDS(on) gfs Vdc mhos

Input Capacitance (VDS 28 V, VGS = 1 MHz) Output Capacitance (VDS 28 V, VGS = 1 MHz) Reverse Transfer Capacitance (VDS 28 V, VGS = 1 MHz) Ciss Coss Crss pF

Common Source Power Gain (VDD = 28 Vdc, Pout 10 W, IDQ = 50 mA, = 1.6 GHz) Drain Efficiency (VDD = 28 Vdc, Pout 10 W, IDQ = 50 mA, = 1.6 GHz) Output Mismatch Stress (VDS = 28 Vdc, Pout 10 W, IDQ = 50 mA, = 1600 MHz, Load VSWR 30:1 at All Phase Angles) Series Equivalent Input Impedance (VDD = 28 Vdc, Pout 10 W, IDQ = 50 mA, = 1.6 GHz) Series Equivalent Output Impedance (VDD = 28 Vdc, Pout 10 W, IDQ = 50 mA, = 1.6 GHz) Gps dB %

24 pF, "A" Chip Capacitor, ATC 0.8­8.0 pF, Variable Capacitor, Johansen Gigatrim 240 pF, "A" Chip Capacitor, ATC 0.1 µF, Ceramic Capacitor 50 µF, 50 V, Electrolytic Capacitor Ferroxcube VK200­19/4B 2 Turns, 0.175 ID, 20 AWG, Close Wound 10 Turns, 20 AWG, Close Wound 1/4 W Resistor

1/4 W Resistor 2 W Resistor 1/8 W Resistor x 0.42 Microstrip x 1.24 Microstrip x 0.48 Microstrip x 0.5 Microstrip x 0.44 Microstrip x 1.165 Microstrip

Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Drain Voltage

 

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