Details, datasheet, quote on part number: MRF2947RAT1
PartMRF2947RAT1
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionLow Noise Transistors
CompanyMotorola Semiconductor Products
DatasheetDownload MRF2947RAT1 datasheet
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Features, Applications

Motorola's MRF2947 device contains two high performance, low­noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC­70ML package; yielding a 9 GHz current gain­bandwidth product. The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well suited for low­voltage, low­current, front­end applications such as paging, cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947 is fully ion­implanted with gold metallization and nitride passivation for maximum device reliability, performance and uniformity. Low Noise Figure, 1.5 dB (Typ) @ 1 GHz @ 5 mA High Current Gain­Bandwidth Product, = 9 GHz (Typ) @ 6 Volts, 15 mA Maximum Stable Gain, @ 1 GHz @ 5 mA Output Third Order Intercept, = +27 dBm Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device orientation in tape)

Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Power Dissipation = 75°C Derate linearly above 75°C @ Collector Current Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RJC Value +150 400 Unit Vdc Watts mW/°C mA °C °C/W

(1) To calculate the junction temperature use PD x RJC + TC. The case temperature is measured on collector lead adjacent to the package body. (2) IC Continuous (MTBF > 10 years).

Collector­Emitter Breakdown Voltage (IC = 0.1 mA, = 0) Collector­Base Breakdown Voltage (IC = 0.1 mA, = 0) Emitter Cutoff Current (VEB = 0) Collector Cutoff Current (VCB = 0) V(BR)CEO V(BR)CBO IEBO ICBO Vdc µA

DC Current Gain (VCE = 500 µA) DC Current Gain (VCE = 5 mA) 75 150

Collector­Base Capacitance (VCB = 1 MHz) Current Gain Bandwidth Product (VCE = 15 mA, = 1 GHz) Ccb 9 pF GHz

Conditions Insertion Gain (VCE = 1 mA, = 1 GHz) (VCE = 15 mA, = 1 GHz) Maximum Unilateral Gain (4) (VCE = 1 mA, = 1 GHz) (VCE = 15 mA, = 1 GHz) Maximum Stable Gain and/or Maximum Available Gain (5) (VCE = 1 mA, = 1 GHz) (VCE = 15 mA, = 1 GHz) Noise Figure Minimum (VCE = 1 mA, = 1 GHz) (VCE = 5 mA, = 1 GHz) Noise Resistance (VCE = 1 mA, = 1 GHz) (VCE = 5 mA, = 1 GHz) Associated Gain at Minimum NF (VCE = 1 mA, = 1 GHz) (VCE = 5 mA, = 1 GHz) Output Power 1 dB Gain Compression (6) (VCE = 15 mA, = 1 GHz) Output Third Order Intercept (6) (VCE = 15 mA, = 1 GHz) Symbol |S21|2 GUmax MSG MAG NFmin RN GNF P1dB OIP3 dBm 15 dB Min Typ Max Unit dB

(3) Pulse width 300 µs, duty cycle 2% pulsed. |S21|2 (4) Maximum unilateral gain is GUmax |S21| (5) Maximum available gain and maximum stable gain are defined by the K factor as follows: MAG = 50 and Zout matched for small signal maximum gain. |S21| MSG 1 |S12|

Figure 3. DC Current Gain versus Collector Current
Figure 4. Gain­Bandwidth Product versus Collector Current
DUT *SLUG TUNER *SLUG TUNER BIAS NETWORK *MICROLAB/FXR < 1 GHz > 1 GHz

 

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MRF2947AT1
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