Details, datasheet, quote on part number: MRF282SR1
PartMRF282SR1
CategoryRF & Microwaves => Transistors => FETs => MOSFETs => Power
TitlePower
DescriptionMRF282SR1, MRF282ZR1 2000 Mhz, 10 W, 26 V Lateral N-channel Broadband RF Power MOSFETs
CompanyMotorola Semiconductor Products
DatasheetDownload MRF282SR1 datasheet
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Features, Applications

Designed for Class A and Class AB PCN and PCS base station applications with frequencies to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. Specified Two­Tone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts PEP Power Gain 10.5 dB Efficiency 28% Intermodulation Distortion ­31 dBc Specified Single­Tone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts CW Power Gain 9.5 dB Efficiency 35% Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large­Signal Impedance Parameters Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

2000 MHz, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFETs

Rating Drain­Source Voltage Gate­Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 200 Unit Vdc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 4.2 Unit °C/W

Characteristic OFF CHARACTERISTICS Drain­Source Breakdown Voltage (VGS = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate­Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 1.0 Vdc µAdc Symbol Min Typ Max Unit

NOTE ­ CAUTION ­ MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)

Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 50 µAdc) Drain­Source On­Voltage (VGS = 10 Vdc, = 0.5 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, = 75 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common­Source Power Gain (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Common­Source Power Gain (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Common­Source Power Gain (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 11.5 dB Ciss Coss Crss 0.45 pF VGS(th) VDS(on) VGS(q) Vdc Symbol Min Typ Max Unit



x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.055 Microstrip x 0.055 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.325 Microstrip

Figure GHz Broadband Test Circuit Schematic Table GHz Broadband Test Circuit Component Designations and Values

Designators WS1, WS2 Description Surface Mount Ferrite Beads, x 0.100, Fair Rite #2743019446 Surface Mount Ferrite Beads, x 0.100, Fair Rite 0.8­8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 0.1 mF Chip Capacitors, Kemet 200 pF Chip Capacitor, B Case, ATC 18 pF Chip Capacitor, B Case, ATC 39 pF Chip Capacitor, B Case, ATC 27 pF Chip Capacitor, B Case, ATC 1.2 pF Chip Capacitor, B Case, ATC 0.6­4.5 pF Variable Capacitor, Johanson Gigatrim 0.5 pF Chip Capacitor, B Case, ATC 15 pF Chip Capacitor, B Case, ATC 0.1 pF Chip Capacitor, B Case, ATC #100B0R1BCA500X 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1/4 W Chip Resistor, x W Chip Resistors, x 0.13, Garrett Instruments 1/4 W Chip Resistors, x 0.13, Garrett Instruments #RM73B2B910JT Beryllium Copper Wear Blocks x 0.135 NOM Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, Omni­Spectra 4­40 Ph Head Screws, 0.125 Long 4­40 Ph Head Screws, 0.188 Long 4­40 Ph Head Screws, 0.312 Long 4­40 Ph Rec. Hd. Screws, 0.438 Long RF Circuit Board x 5 Copper Clad PCB, Glass Teflon


 

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