|Category||RF & Microwaves => Transistors => FETs => MOSFETs => Power|
|Description||MRF282SR1, MRF282ZR1 2000 Mhz, 10 W, 26 V Lateral N-channel Broadband RF Power MOSFETs|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF282SR1 datasheet
Designed for Class A and Class AB PCN and PCS base station applications with frequencies to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. Specified TwoTone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts PEP Power Gain 10.5 dB Efficiency 28% Intermodulation Distortion 31 dBc Specified SingleTone Performance @ 2000 MHz, 26 Volts Output Power 10 Watts CW Power Gain 9.5 dB Efficiency 35% Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent LargeSignal Impedance Parameters Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.2000 MHz, 26 V LATERAL NCHANNEL BROADBAND RF POWER MOSFETs
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 200 Unit Vdc Watts W/°C °CCharacteristic Thermal Resistance, Junction to Case Symbol RJC Max 4.2 Unit °C/W
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 1.0 Vdc µAdc Symbol Min Typ Max Unit
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 50 µAdc) DrainSource OnVoltage (VGS = 10 Vdc, = 0.5 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, = 75 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) CommonSource Power Gain (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) CommonSource Power Gain (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 10 W PEP, IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) CommonSource Power Gain (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 11.5 dB Ciss Coss Crss 0.45 pF VGS(th) VDS(on) VGS(q) Vdc Symbol Min Typ Max Unit
x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.055 Microstrip x 0.055 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.325 Microstrip
Figure GHz Broadband Test Circuit Schematic Table GHz Broadband Test Circuit Component Designations and Values
Designators WS1, WS2 Description Surface Mount Ferrite Beads, x 0.100, Fair Rite #2743019446 Surface Mount Ferrite Beads, x 0.100, Fair Rite 0.88.0 pF Variable Capacitors, Johanson Gigatrim #27291SL 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 0.1 mF Chip Capacitors, Kemet 200 pF Chip Capacitor, B Case, ATC 18 pF Chip Capacitor, B Case, ATC 39 pF Chip Capacitor, B Case, ATC 27 pF Chip Capacitor, B Case, ATC 1.2 pF Chip Capacitor, B Case, ATC 0.64.5 pF Variable Capacitor, Johanson Gigatrim 0.5 pF Chip Capacitor, B Case, ATC 15 pF Chip Capacitor, B Case, ATC 0.1 pF Chip Capacitor, B Case, ATC #100B0R1BCA500X 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1/4 W Chip Resistor, x W Chip Resistors, x 0.13, Garrett Instruments 1/4 W Chip Resistors, x 0.13, Garrett Instruments #RM73B2B910JT Beryllium Copper Wear Blocks x 0.135 NOM Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, OmniSpectra 440 Ph Head Screws, 0.125 Long 440 Ph Head Screws, 0.188 Long 440 Ph Head Screws, 0.312 Long 440 Ph Rec. Hd. Screws, 0.438 Long RF Circuit Board x 5 Copper Clad PCB, Glass Teflon
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