Details, datasheet, quote on part number: MRF282
PartMRF282
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs
DescriptionLateral N-channel Broadband RF Power MOSFETs
CompanyMotorola Semiconductor Products
DatasheetDownload MRF282 datasheet
Cross ref.Similar parts: UGF2010, UPF2010
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Features, Applications

Designed for class A and class AB PCN and PCS base station applications at frequencies to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. Specified Two­Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain 11 dB Efficiency = 30% Intermodulation Distortion = ­30 dBc Specified Single­Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (CW) Power Gain 11 dB Efficiency = 40% Characterized with Series Equivalent Large­Signal Impedance Parameters S­Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power Gold Metallization for Improved Reliability MAXIMUM RATINGS

Rating Drain­Source Voltage Gate­Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature

W, 2000 MHz, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFETs
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.9 Unit °C/W

Characteristic OFF CHARACTERISTICS Drain­Source Breakdown Voltage (VGS = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate­Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 1.0 Vdc µAdc Symbol Min Typ Max Unit

NOTE ­ CAUTION ­ MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)

Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 50 µAdc) Drain­Source On­Voltage (VGS = 10 Vdc, = 0.5 Adc) Forward Transconductance (VDS = 10 Vdc, = 0.5 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, = 75 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common­Source Power Gain (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz) Common­Source Power Gain (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 10 W (PEP), IDQ = 75 mA, = 1930.0 MHz, = 1930.1 MHz) Common­Source Power Gain (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout 10 W CW, IDQ = 75 mA, = 2000.0 MHz, = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 12.6 dB Ciss Coss Crss 0.45 pF VGS(th) VDS(on) gfs VGS(q) Vdc S Vdc Symbol Min Typ Max Unit


Ferrite Bead, Ferroxcube, 56­590­65­3B 470 µF, Electrolytic Capacitor, Mallory 0.6­4.5 pF, Variable Capacitor, Johanson 0.1 µF, Chip Capacitor, Kemet 1000 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 100 pF, B Case Chip Capacitor, ATC 0.4­2.5 pF, Variable Capacitor, Johanson Straight Wire, 21 AWG, 0.3 8 Turns, 0.042 ID, 24 AWG, Enamel 9 Turns, 0.046 ID, 26 AWG, Enamel 3 Turns, 0.048 ID, 25 AWG, Enamel

x 0.08 Microstrip x 0.08 Microstrip x 0.08 Microstrip x 0.08 Microstrip x 0.330 Microstrip x 0.330 Microstrip x 0.330 Microstrip x 0.08 Microstrip x 0.08 Microstrip x 0.08 Microstrip 35 Mils Glass Teflon®, Arlon = 2.55 Input/Output Connectors Type N Flange Mount


 

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