Details, datasheet, quote on part number: MRF281ZR1
PartMRF281ZR1
CategoryRF & Microwaves => Transistors => FETs => MOSFETs => Power
TitlePower
DescriptionMRF281SR1, MRF281ZR1 2000 Mhz, 4 W, 26 V Lateral N-channel Broadband RF Power MOSFETs
CompanyMotorola Semiconductor Products
DatasheetDownload MRF281ZR1 datasheet
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Features, Applications

Designed for digital and analog cellular PCN and PCS base station applications with frequencies from to 2500 MHz. Characterized for operation Class A and Class at 26 volts in commercial and industrial applications. Specified Two­Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power 4 Watts PEP Power Gain 11 dB Efficiency 30% Intermodulation Distortion ­29 dBc Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large­Signal Impedance Parameters S­Parameter Characterization at High Bias Levels Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

2000 MHz, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFETs

Rating Drain­Source Voltage Gate­Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 200 Unit Vdc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 5.74 Unit °C/W

Characteristic OFF CHARACTERISTICS Drain­Source Breakdown Voltage (VGS = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate­Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS Vdc µAdc Symbol Min Typ Max Unit

NOTE ­ CAUTION ­ MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)

Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 20 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, = 25 mAdc) Drain­Source On­Voltage (VGS = 10 Vdc, 0.1 A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common­Source Amplifier Power Gain (VDD = 26 Vdc, Pout 4 W PEP, IDQ = 25 mA, = 2000.0 MHz, = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 4 W PEP, IDQ = 25 mA, = 2000.0 MHz, = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 4 W PEP, IDQ = 25 mA, = 2000.0 MHz, = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 4 W PEP, IDQ = 25 mA, = 2000.0 MHz, = 2000.1 MHz) Common­Source Amplifier Power Gain (VDD = 26 Vdc, Pout 4 W PEP, IDQ = 25 mA, = 1930.0 MHz, = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 4 W, IDQ = 25 mA, = 1930.0 MHz, = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 4 W PEP, IDQ = 25 mA, = 1930.0 MHz, = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 4 W PEP, IDQ = 25 mA, = 1930.0 MHz, = 1930.1 MHz) Common­Source Amplifier Power Gain (VDD = 26 Vdc, Pout 4 W CW, IDQ = 25 mA, = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 4 W CW, IDQ = 25 mA, = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout 4 W CW, IDQ = 25 mA, = 2000.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Test) Gps 12.5 dB Ciss Coss Crss 0.17 pF VGS(th) VGS(q) VDS(on) Vdc Symbol Min Typ Max Unit



ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency.

Figure 1. Series Equivalent Input and Output Impedance

 

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