|Category||RF & Microwaves => Transistors => FETs => MOSFETs => Power|
|Description||MRF284R1, MRF284LSR1 2000 Mhz, 30 W, 26 V Lateral N-channel Broadband RF Power MOSFETs|
|Company||Motorola Semiconductor Products|
|Datasheet||Download MRF275G datasheet
|Cross ref.||Similar parts: SD56120M, SR705|
Designed for PCN and PCS base station applications with frequencies from to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCNPCS/cellular radio and wireless local loop. Specified TwoTone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain 9 dB Efficiency = 30% Intermodulation Distortion = 29 dBc Typical SingleTone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain 9.5 dB Efficiency = 45% Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent LargeSignal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.2000 MHz, 26 V LATERAL NCHANNEL BROADBAND RF POWER MOSFETs
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 200 Unit Vdc Watts W/°C °CCharacteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.0 Unit °C/W
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 1.0 10 Vdc µAdc Symbol Min Typ Max Unit
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, = 150 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, = 200 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 1.0 MHz) FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system) CommonSource Power Gain (VDD = 26 Vdc, Pout 30 W, IDQ = 200 mA, = 2000.0 MHz, = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 30 W, IDQ = 200 mA, = 2000.0 MHz, = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 30 W, IDQ = 200 mA, = 2000.0 MHz, = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 30 W, IDQ = 200 mA, = 2000.0 MHz, = 2000.1 MHz) CommonSource Amplifier Power Gain (VDD = 26 Vdc, Pout 30 W PEP, IDQ = 200 mA, = 1930.0 MHz, = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 30 W PEP, IDQ = 200 mA, = 1930.0 MHz, = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout 30 W PEP, IDQ = 200 mA, = 1930.0 MHz, = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout 30 W PEP, IDQ = 200 mA, = 1930.0 MHz, = 1930.1 MHz) CommonSource Amplifier Power Gain (VDD = 26 Vdc, Pout 30 W CW, IDQ = 200 mA, = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout 30 W CW, IDQ = 200 mA, = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout 30 W CW, IDQ = 200 mA, = 2000.0 MHz, VSWR 10:1, at All Phase Angles) Gps 10.5 dB Ciss Coss Crss 1.4 pF VGS(th) VGS(q) VDS(on) gfs Vdc S Symbol Min Typ Max Unit
x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.515 Microstrip x 0.515 Microstrip x 0.515 Microstrip
x 0.515 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.325 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip Arlon = 2.55
Figure 1. 1.932.0 GHz Broadband Test Circuit Schematic Table GHz Broadband Test Circuit Component Designations and Values
Designators WS1, WS2 Description Ferrite Beads, Round, Ferroxcube 0.88.0 pF Gigatrim Variable Capacitors, Johanson #27291SL 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 0.1 mF Chip Capacitors, Kemet 220 pF Chip Capacitor, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 5.1 pF Chip Capacitors, B Case, ATC 1.2 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitor, B Case, ATC 0.64.5 pF Gigatrim Variable Capacitors, Johanson 200 pF Chip Capacitors, B Case, ATC #100B201KP500X 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 4 Turns, #24 AWG, 0.120 OD, 0.140 Long, (12.5 nH), Coilcraft #A04T5 2 Turns, #24 AWG, 0.120 OD, 0.140 Long, (5.0 nH), Coilcraft 1/4 W Chip Resistors, x 0.13, Garrett Instruments 1/4 W Chip Resistor, x 0.13 Solid Copper Buss Wire, 16 AWG Beryllium Copper Wear Blocks x 0.250
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