Details, datasheet, quote on part number: MRF21180S
PartMRF21180S
CategoryRF & Microwaves => Transistors => FETs => MOSFETs => Power
TitlePower
DescriptionMRF21180, MRF21180S 2170 Mhz, 170 W, 28 V Lateral N-channel RF Power MOSFETs
CompanyMotorola Semiconductor Products
DatasheetDownload MRF21180S datasheet
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Features, Applications

Designed for W­CDMA base station applications with frequencies from to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN­PCS/cellular radio and WLL applications. Typical 2­carrier W­CDMA Performance for VDD = 28 Volts, IDQ x 850 mA, = 2135 MHz, = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz ­ 5 MHz and + 5 MHz. Distortion Products Measured over a 3.84 MHz ­ 10 MHz and + 10 MHz, Each Carrier Peak/Avg. @ 0.01% Probability on CCDF. Output Power 38 Watts (Avg.) Power Gain 12.1 dB Efficiency IM3 37.5 dBc ACPR ­41 dBc Internally Input and Output Matched, for Ease of Use High Gain, High Efficiency, and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large­Signal Impedance Parameters

Rating Drain­Source Voltage Gate­Source Voltage Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +150 200 Unit Vdc Watts W/°C °C

Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.46 Unit °C/W

NOTE ­ CAUTION ­ MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Characteristic OFF CHARACTERISTICS (1) Drain­Source Breakdown Voltage (VGS = 0 Vdc, = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate­Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, = 200 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, = 850 mAdc) Drain­Source On­Voltage (VGS = 10 Vdc, = 2 Adc) Forward Transconductance (VDS = 10 Vdc, = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 1 MHz) Crss 3.6 pF VGS(th) VGS(Q) VDS(on) gfs Vdc S V(BR)DSS IDSS IGSS 10 1 Vdc µAdc Symbol Min Typ Max Unit

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2­Carrier W­CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio @ 0.01% Probability on CCDF. Common­Source Amplifier Power Gain (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 850 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 850 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 850 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz; IM3 measured over 3.84 MHz f1 ­10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 850 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz; ACPR measured over 3.84 MHz ­ 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout 38 W Avg., IDQ x 850 mA, = 2112.5 MHz, = 2122.5 MHz and = 2157.5 MHz, = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout 170 W CW, IDQ x 850 mA, = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps 12.1 dB

No Degradation In Output Power Before and After Test

(1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push­pull configuration. (continued)

ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Two­Tone Common­Source Amplifier Power Gain (VDD = 28 Vdc, Pout 170 W, IDQ x 850 mA, = 2110 MHz, = 2120 MHz and = 2160 MHz, = 2170 MHz) Two­Tone Drain Efficiency (VDD = 28 Vdc, Pout 170 W, IDQ x 850 mA, = 2110 MHz, = 2120 MHz and = 2160 MHz, = 2170 MHz) Two­Tone Intermodulation Distortion (VDD = 28 Vdc, Pout 170 W, IDQ x 850 mA, = 2110 MHz, = 2120 MHz and = 2160 MHz, = 2170 MHz) Two­Tone Input Return Loss (VDD = 28 Vdc, Pout 170 W, IDQ x 850 mA, = 2110 MHz, = 2120 MHz and = 2160 MHz, = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ x 850 mA, = 2170 MHz) (2) Measurements made with device in push­pull configuration. Gps 12 dB



 

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