Details, datasheet, quote on part number: MRF607
PartMRF607
CategoryDiscrete => Transistors => Bipolar => RF => Amplifier
TitleAmplifier
DescriptionRF NPN Transistor
CompanyMicrosemi Corporation
DatasheetDownload MRF607 datasheet
Cross ref.Similar parts: 40972, 2SC82, ECG47, SD127, SD1270
Quote
Find where to buy
 
  

 

Features, Applications

Features

12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output 12.5V, 175 MHz 11.5 minimum Gain 12.5V, 175 MHz 50% Efficiency 12.5V, 175 MHz

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

D Total Device Dissipation = 25C Derate above 3.5 28 Watts mW/ C

Symbol BVCES BVCEO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0 Vdc) Collector-Emitter Sustaining Voltage (IC=25 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE =.5 mA, = 0) Collector Cutoff Current (VCE = 10 Vdc, IB Value Typ. Max.3 Unit Vdc mA

Symbol COB Test Conditions Min. Output Capacitance (VCB = 12 Vdc, = 1.0 MHz) Value Typ. Max. 15 Unit pF

Symbol GPE Power Gain Test Conditions Min. Test Circuit-Figure 1 Pout = 1.75W, VCE = 175 MHz Test Circuit-Figure 1 Pout = 1.75W, VCE = 175 MHz 11.5 Value Typ. Max. Unit dB

Figure - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, AND EFFICIENCY SPECIFICATIONS.

1 TURN #20 AWG, 3/8" I.D. 3 TURNS #20 AWG, 3/8" I.D. 0.22 H MOLDED CHOKE 0.15 H MOLDED CHOKE WITH TANTALUM FERROXCUBE 56-590-65-3B BEAD ON GROUND LEAD


 

Some Part number from the same manufacture Microsemi Corporation
MRF904 RF NPN Transistor
MRF914
MRF951
MS1002 Schottky Rectifier
MS1003 Schottky Rectifier, Package : TO-220AC
MS1004
MS1005
MS1006
MS1008
MS1009
MS10100
MS1020 NPN Transistor
MS104 Schottky Rectifier, Package : DO-41
MS1045 Schottky Rectifier, Package : TO-220AC
MS105 Schottky Rectifier, Package : DO-41
MS1060 Schottky Rectifier
MS1077 RF NPN Transistor
MS1078
MS108 Schottky Rectifier, Package : DO-41
MS109
MS1226 RF NPN Transistor

1N4256 : High Voltage Rectifiers

MXP1022-PS/Q : Position Sensing Photo Detectors

SMBG5931B : Zener Voltage Regulator Diode, Package : DO-215AA

SSF0650 : 5 to 100 Amp Schottky Rectifier

1N4370CTR-1 : Silicon 400 mW Zener Diodes

MLL4627C-1 : Glass Surface Mount 0.5 WATT Zeners

JANTX1N757AUR : Silicon 500 mW Zener Diodes

RH4571-2 : 6.4 Volt Temperature Compensated Zener Reference Diodes

JANMVSMCJLCE43A : 1500 WATT LOW Capacitance Surface Mount Transient Voltage Suppressor

RH4578URTR-1-2 : 6.4 Volt Temperature Compensated Zener Reference Diodes

1N750CUR : Silicon 400 mW Zener Diodes

SM8LC03E3 : Tv - Diode Circuit Protection 3.3V 500W; TVS ARRAY BIDIR 3.3 VWM SO-8 Specifications: Package / Case: 8-SOIC (0.154", 3.90mm Width) ; Packaging: Cut Tape (CT) ; Polarization: 2 Channel Array - Bidirectional ; Power (Watts): 500W ; Voltage - Reverse Standoff (Typ): 3.3V ; Voltage - Breakdown: 4V ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

Same catergory

2A01 : Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 2 ;; Ifsm (A)= 60.

AU01A : . ) is with Half-cycle Sinewave Heatsink Single Shot (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) .

BZY47C3V3...C200 : Discrete, Diodes, Zener. n PRO ELECTRON REGISTRATION n HIGH SURGE @ 10mA Maximum Ratings DC Power Dissipation with TA CPD Junction to Ambient Thermal ResistanceRJA Lead TemperatureTL Operating & Storage Temperature RangeTJ, TSTRG Breakdown Characteristics n WIDE VOLTAGE 200V n MEETS UL 94V-0 Units W C .

IXFK180N10 : 100V HiperFET Power MOSFET. Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions to 150C; RGS 1 MW Continuous Transient = 25C (MOSFET chip capability) External lead (current limit) = 25C, Note IS IDM, di/dt 100 A/ms, VDD VDSS = 25C International.

KDR701S : = Schottky Barrier Diode ;; Package = SOT-23. CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature SYMBOL VRRM VR IO IFSM Tj Tstg RATING UNIT CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION f=1MHz IR=IF=100mA.

R1200 : Package Type : DO-41, if : 500mA, VRM : 1200V. Low Cost Low Leakage Low Forward Voltage Drop High Current Capability High Voltage 500 Milliamp High Voltage Silicon Rectifier to 2000 Volts Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage R1200-R1800 R2000 Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance IF(AV) IFSM 50C 8.3ms,.

STD15N06 : Low Voltage. Old PRODUCT: Not Suitable For Design-in. TYPICAL RDS(on) = 0.075 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4").

PDTC124EMB : NPN Resistor-equipped Transistor; R1 = 22 KΩ, R2 = 22 KΩ NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EMB..

03028-BR103BKZC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BR, 0.01 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

DT33-2002 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.

FS300R17KE4 : 375 A, 1700 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: MODULE-29 ; Number of units in IC: 6.

GS1AEP : 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC. s: Package: SMAE, 2 PIN ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

T7YA100MB40 : RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole, ROHS COMPLIANT ; Resistance Range: 10 ohms ; Tolerance: 20 +/- % ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.

2SK3889-01L : 9 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 1 ohms ; PD: 1670 milliwatts ; Package Type: TO-220, TO-220AB, 3 PIN ; Number of units in IC: 1.

 
0-C     D-L     M-R     S-Z