Details, datasheet, quote on part number: MRF555
PartMRF555
CategoryDiscrete
DescriptionRF & Microwave Discrete Low Power Transistors
CompanyMicrosemi Corporation
DatasheetDownload MRF555 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Specified V, 470 MHz Characteristics Output Power 1.5 W Minimum Gain 11 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

Symbol Test Conditions Min. BVCEO BVCES BVEBO ICES HFE Collector-Emitter Breakdown Voltage (IC = 5 mAdc, = 0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) DC Current Gain (IC = 100 mA, VCE = 5.0 Vdc) Both Value Typ. Max. 5 200 Unit Vdc mA -

Symbol Test Conditions Min. COB Output Capacitance (VCB = 10 Vdc, = 1.0 MHz) Value Typ. --Max. 5.5 Unit pF

Symbol Power Gain GPE Collector Efficiency Test Conditions Min. Test Circuit-Figure 1 Pout 1.5 W, VCE = 470 MHz Test Circuit-Figure 1 Pout 1.5 W, VCE = 175 MHz Test Circuit-Figure 1 Pout 1.5 W, VCE = 175 MHz 11 Value Typ. 12.5 Max. Unit dB


 

Some Part number from the same manufacture Microsemi Corporation
MRF555T RF NPN Transistor
MRF559
MRF581
MRF5812
MRF581A
MRF586
MRF5943
MRF607
MRF904
MRF914
MRF951
MS1002 Schottky Rectifier
MS1003 Schottky Rectifier, Package : TO-220AC
MS1004
MS1005
MS1006
MS1008
MS1009
MS10100
MS1020 NPN Transistor
MS104 Schottky Rectifier, Package : DO-41

1N746 : Zener Voltage Regulator Diode, Package : DO-35

2N29071AXC : Switching Transistor PNP Silicon

MXP1043PC : Microwave RF & Microwave Transistors VHF Communications

SMAJ4761A : Zener Voltage Regulator Diode, Package : DO-214AC

JANTXV1N987A : Silicon 500 mW Zener Diodes

JAN1N4986D : 5 WATT Glass Zener Diodes

JANTX1N4579URTR : Silicon 500 mW Zener Diodes

SMCGLCE70 : 1500 WATT LOW Capacitance Surface Mount Transient Voltage Suppressor

RH4574A-1-2 : 6.4 Volt Temperature Compensated Zener Reference Diodes

Same catergory

1N5400-1N5408 : . 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low cost Low leakage Low forward voltage drop High current capacity Easily cleaned with freon, alcohol, chlorothene and similar solvents Case: JEDEC DO-27 molded plastic (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method.

APT30D40BCT : . Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse.

BYC10-600 : BYC10-600; Rectifier Diode Ultrafast, Low Switching Loss. Extremely fast switching Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET APPLICATIONS Active power factor correction Half-bridge lighting ballasts Half-bridge/ full-bridge switched mode power supplies. The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package. Limiting values in accordance.

FDH1000 : High Conductance Switching Diodes.

KRC827E : BRTs. = Built in Bias Resistor ;; Package = TES6.

LS310-313 : . VERY HIGH GAIN TIGHT VBE MATCHING HIGH fT hFE = 0.2mV TYP. 250MHz TYP. 1mA C1 ABSOLUTE MAXIMUM RATINGS NOTE @ 25C (unless otherwise noted) Collector Current 10mA IC Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor +150C B1 ONE SIDE 250mW 2.3mW/C.

MSAFX11P50A : P Channel MOSFET, Package : Coolpack1. High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Drain-to-Source Breakdown Voltage.

PHX1N50E : PHX1N50E; Powermos Transistor ISOlated Version fo PHP1N50E. N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.

B-1UR100F : RES,AXIAL,WIREWOUND,100M OHMS,500WV,1% +/-TOL. s: Category / Application: General Use.

D1FT10A : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

FDG314PD87Z : 650 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 25 volts ; rDS(on): 1.1 ohms ; Package Type: SC-70, 6 PIN ; Number of units in IC: 1.

HMM1375-100 : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Rated DC Current: 5500 milliamps ; Operating Temperature: -20 to 105 C (-4 to 221 F).

LQW21HN1R0J00B : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 1 microH ; Rated DC Current: 115 milliamps ; Operating Temperature:.

MAL25144473E3 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 47000 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 47000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 2820 microamps ; ESR: 29 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).

SIS376DN-T1-GE3 : 35 A, 20 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0058 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 ; Number of units in IC: 1.

TK3A65DA : 2.5 A, 650 V, 2.51 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 650 volts ; rDS(on): 2.51 ohms ; Package Type: ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN ; Number of units in IC: 1.

U426-PDIP : 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; Package Type: PLASTIC, DIP-8 ; Number of units in IC: 2.

2N3790R1 : 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: PNP ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

 
0-C     D-L     M-R     S-Z