Details, datasheet, quote on part number: MRF555
DescriptionRF & Microwave Discrete Low Power Transistors
CompanyMicrosemi Corporation
DatasheetDownload MRF555 datasheet
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Features, Applications

Specified V, 470 MHz Characteristics Output Power 1.5 W Minimum Gain 11 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

Symbol Test Conditions Min. BVCEO BVCES BVEBO ICES HFE Collector-Emitter Breakdown Voltage (IC = 5 mAdc, = 0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) DC Current Gain (IC = 100 mA, VCE = 5.0 Vdc) Both Value Typ. Max. 5 200 Unit Vdc mA -

Symbol Test Conditions Min. COB Output Capacitance (VCB = 10 Vdc, = 1.0 MHz) Value Typ. --Max. 5.5 Unit pF

Symbol Power Gain GPE Collector Efficiency Test Conditions Min. Test Circuit-Figure 1 Pout 1.5 W, VCE = 470 MHz Test Circuit-Figure 1 Pout 1.5 W, VCE = 175 MHz Test Circuit-Figure 1 Pout 1.5 W, VCE = 175 MHz 11 Value Typ. 12.5 Max. Unit dB


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1N5400-1N5408 : . 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low cost Low leakage Low forward voltage drop High current capacity Easily cleaned with freon, alcohol, chlorothene and similar solvents Case: JEDEC DO-27 molded plastic (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method.

APT30D40BCT : . Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse.

BYC10-600 : BYC10-600; Rectifier Diode Ultrafast, Low Switching Loss. Extremely fast switching Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET APPLICATIONS Active power factor correction Half-bridge lighting ballasts Half-bridge/ full-bridge switched mode power supplies. The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package. Limiting values in accordance.

FDH1000 : High Conductance Switching Diodes.

KRC827E : BRTs. = Built in Bias Resistor ;; Package = TES6.

LS310-313 : . VERY HIGH GAIN TIGHT VBE MATCHING HIGH fT hFE = 0.2mV TYP. 250MHz TYP. 1mA C1 ABSOLUTE MAXIMUM RATINGS NOTE @ 25C (unless otherwise noted) Collector Current 10mA IC Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor +150C B1 ONE SIDE 250mW 2.3mW/C.

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B-1UR100F : RES,AXIAL,WIREWOUND,100M OHMS,500WV,1% +/-TOL. s: Category / Application: General Use.

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HMM1375-100 : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Rated DC Current: 5500 milliamps ; Operating Temperature: -20 to 105 C (-4 to 221 F).

LQW21HN1R0J00B : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 1 microH ; Rated DC Current: 115 milliamps ; Operating Temperature:.

MAL25144473E3 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 47000 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 47000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 2820 microamps ; ESR: 29 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).

SIS376DN-T1-GE3 : 35 A, 20 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0058 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 ; Number of units in IC: 1.

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