Details, datasheet, quote on part number: MRF545
PartMRF545
CategoryDiscrete => Transistors => Bipolar => RF => Amplifier
TitleAmplifier
DescriptionPNP Transistor
CompanyMicrosemi Corporation
DatasheetDownload MRF545 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Features

Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain 14 dB (typ) = 200 MHz High Collector Base Breakdown Voltage - BVCBO 100 V (min) High - 1400 MHz

Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

D Total Device Dissipation = 25C Derate above 25C Storage Temperature Range 3.5 20 Watts mW/ C

Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, = 0) Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 Adc, = 0) Collector Cutoff Current (VCE = 80 Vdc, = 0 Vdc) Collector Cutoff Current (VCE = 80 Vdc, = 0 Vdc) 100 3.0 Value Typ. 1.0 Max. 20 100 Unit Vdc A

Symbol Test Conditions Min. COB CIB CCB fT Output Capacitance (VCB IE=0, f=1 MHz) Input Capacitance (VEB IE=0, f=1 MHz) Junction Capacitance (VCB IE=0, f=1 MHz) Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, = 250 MHz) 1000 Value Typ. Max. 3.2 Unit pF MHz

Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain

 

Some Part number from the same manufacture Microsemi Corporation
MRF553 RF NPN Transistor
MRF555 RF & Microwave Discrete Low Power Transistors
MRF555T RF NPN Transistor
MRF559
MRF581
MRF5812
MRF581A
MRF586
MRF5943
MRF607
MRF904
MRF914
MRF951
MS1002 Schottky Rectifier
MS1003 Schottky Rectifier, Package : TO-220AC
MS1004
MS1005
MS1006
MS1008
MS1009
MS10100

JANTXV1N4120UR-1. : Zener Voltage Regulator Diode, Package : DO-213AA

P4KE18C : Transient Voltage Suppressor, Package : DO-41

SMAJ5945 : Zener Voltage Regulator Diode

UM6602 : Pin Diode, Package : See_factory

JANTXV1N4568URTR : Silicon 500 mW Zener Diodes

G2120X1EB1S : Silicon Power Rectifier Assemblies Plate Heatsink

JANTX1N4576UR-2 : Silicon 500 mW Zener Diodes

JANTX1N5544CUR-1 : Silicon 500 mW Zener Diodes

JANTX1N821-2 : Silicon 500 mW Zener Diodes

JAN1N827TR-1-1 : 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated

JAN1N5530C-1 : 1500 WATT Unidirectional Transient Voltage Suppressor

A54SX32A-2TQG176 : Embedded - Fpga (field Programmable Gate Array) Integrated Circuit (ics); IC FPGA SX 48K GATES 176-TQFP Specifications: Number of Gates: * ; Number of I /O: * ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

Same catergory

2N5069 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 80V ;; IC(cont) = 5A ;; HFE(min) = 20 ;; HFE(max) = 80 ;; @ Vce/ic = 2V / 1A ;; FT = 4MHz ;; PD = 88W.

2SB624 : Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Mini Mold.

HVL358B : for Electric Tuning. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

KBU1005G : Glass Passivated. Pakage = Kbu ;; Max. Reverse Voltage VRM (V)= 600 ;; Max. Aver. Rect. Current io (A)= 10 ;; Ifsm (A)= 200.

MSAGA11F120D : Insulated Gate Bipolar Transistor, Package : Die. 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 Fast IGBT Die for Implantable Cardio Defibrillator Applications N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride,.8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. Collector/Gate Metallization:.

NTE2355 : Silicon Complementary NPN Transistor. Digital W/2 Built-in 10k Bias Resistors..

SF14G : Glass Passivated. Pakage = DO-41 ;; Max. Reverse Voltage VRM (V)= 200 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.

SFR/U9224 : Advanced Power MOSFET. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current.

02SSL40 : 0.2 A, 40 V, SILICON, SIGNAL DIODE. s: Package: ROHS COMPLIANT, PALSTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 200 mA ; RoHS Compliant: RoHS.

08053A100BAT2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, C0G, 0.00001 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 25 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

EETHD2G121HJ : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 120 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 120 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 400 volts ; Leakage Current: 657 microamps ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13 to 221 F).

GMC04C0G1R0B50NT-LF : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000001 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-6 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

MSP1N4728AG : 3.3 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL. s: Diode Type: VOLTAGE REGULATOR DIODE.

TCBZX85C10.TB : 10 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.

298D106X0002K2T : CAPACITOR, TANTALUM, SOLID, POLARIZED, 2 V, 10 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 10 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2 volts ; Leakage Current: 0.5000 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 0402 ; Operating.

50CE4.7AX : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 4.7 uF, SURFACE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Leakage Current: 3 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 105 C (-67 to 221 F).

 
0-C     D-L     M-R     S-Z