Details, datasheet, quote on part number: MRF4427
PartMRF4427
CategoryDiscrete => Transistors => Bipolar => RF => Amplifier
TitleAmplifier
DescriptionRF NPN Transistor
CompanyMicrosemi Corporation
DatasheetDownload MRF4427 datasheet
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Features, Applications

Features

Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Low Voltage Version of MRF3866 Maximum Available Gain @ 200MHz

R1 suffix­Tape and Reel, 500 units R2 suffix­Tape and Reel, 2500 units

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

Total Device Dissipation = 25șC Derate above 25șC Storage Temperature

Symbol BVCEO BVCBO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0 Vdc) 40 2.0 Value Typ. Max.02 Unit Vdc mA

HFE DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 360 mAdc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, = 20 mA) mVdc

Symbol Ftau Cob Test Conditions Min. Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 12 Vdc, = 200 MHz) Output Capacitance (VCB = 12 Vdc, = 1.0 MHz) Value Typ. 1.3 Max. 3.4 Unit GHz

Symbol Test Conditions Min. Maximum Unilateral Gain = 50 mAdc, VCE = 12 Vdc, = 200 MHz Maximum Available Gain = 50 mAdc, VCE = 12 Vdc, = 200 MHz Insertion Gain (calculated) = 50 mAdc, VCE = 12 Vdc, = 200 MHz Value Typ. 20 14 Max. Unit dB


 

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