Details, datasheet, quote on part number: MRF3866R2
PartMRF3866R2
CategoryDiscrete => Transistors => Bipolar => RF => Amplifier
TitleAmplifier
DescriptionRF NPN Transistor
CompanyMicrosemi Corporation
DatasheetDownload MRF3866R2 datasheet
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Features, Applications

Features

Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain @ 300 MHz

R1 suffix­Tape and Reel, 500 units R2 suffix­Tape and Reel, 2500 units

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

D Total Device Dissipation = 25șC Derate above 1.0 8 Watts mW/ șC

Symbol BVCER BVCBO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, = 0, rbe = 10 Ohms) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) 55 3.5 Value Typ. Max.02 Unit Vdc mA

HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc)

Symbol COB Ftau Test Conditions Min. Output Capacitance (VCB = 30 Vdc, = 1.0 MHz) Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, = 200 MHz) 800 Value Typ. 1.6 1000 Max. 2.0 Unit pF MHz

Symbol Test Conditions Min. Maximum Unilateral Gain = 50 mAdc, VCE = 15 Vdc, = 300 MHz Maximum Available Gain = 50 mAdc, VCE = 15 Vdc, = 300 MHz Insertion Gain = 50 mAdc, VCE = 15 Vdc, = 300 MHz Value Typ. 17 12.5 Max. Unit dB


 

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