Details, datasheet, quote on part number: MRF327
PartMRF327
CategoryDiscrete => Transistors => Bipolar => RF
Description80 W, 100-500 Mhz, RF Power Transistor NPN Silicon
CompanyM/A-COM, Inc.
DatasheetDownload MRF327 datasheet
Cross ref.Similar parts: CM80-28
Quote
Find where to buy
 
  

 

Features, Applications

. designed primarily for wideband large­signal output amplifier stages in the to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over to 400 MHz Band Minimum Gain @ 400 MHz Built­In Matching Network for Broadband Operation Using Double Match Technique 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications Characterized for to 500 MHz MAXIMUM RATINGS

Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current Continuous Collector Current Peak Total Device Dissipation 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value to +150 Unit Vdc Adc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit °C/W

Collector­Emitter Breakdown Voltage (IC = 80 mAdc, = 0) Collector­Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter­Base Breakdown Voltage (IE = 8.0 mAdc, = 0) Collector­Base Breakdown Voltage (IC = 80 mAdc, = 0) Collector Cutoff Current (VCB = 30 Vdc, = 0) V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO Vdc mAdc

NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated an RF amplifier.

ELECTRICAL CHARACTERISTICS ­ continued (TC = 25°C unless otherwise noted.)

Common­Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 400 MHz, VSWR = 30:1 All Phase Angles) GPE No Degradation in Output Power dB %

1.0­20 pF Piston Trimmer (Johanson JMC 36 pF ATC 100 mil Chip Capacitor 43 pF ATC 100 mil Chip Capacitor 100 pF UNELCO 0.1 µF Erie Redcap 680 pF Feedthru 50 V Tantalum L1 4 Turns #22 AWG Enameled, 3/16 ID Closewound with Ferroxcube L1 Bead (#56­590­65/4B) on Ground End of Coil L2 Ferroxcube VK200­19/4B Ferrite Choke L3 7 Turns #18 AWG, 11/16 Long, Wound k 2.0 Watt Resistor

L4 6 Turns #20 AWG Enameled, 3/16 ID Closewound L5 4 Turns #22 AWG Enameled, 1/8 ID Closewound Z1 Microstrip L Z2 Microstrip L Z3 Microstrip 10 2.0 Watt Board Glass Teflon = 0.062 Input/Output Connectors Type N DUT Socket Lead Frame Etched from 80­mil­Thick Copper

Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Input Power

 

Some Part number from the same manufacture M/A-COM, Inc.
MRF392 125 W, 30-500 Mhz, RF Power Transistor NPN Silicon
MRF393 100 W, 30-500 Mhz, RF Power Transistor NPN Silicon
MRF421 100 W, 30 Mhz, RF Power Transistor NPN Silicon
MRF422 150 W, 30 Mhz, RF Power Transistor NPN Silicon
MRF426 25 W, 30 Mhz, RF Power Transistor NPN Silicon
MRF428 150 W, 30 Mhz, RF Power Transistor NPN Silicon
MRF429
MRF448 250 W, 30 Mhz, RF Power Transistor NPN Silicon
MRF454 80 W, 30 Mhz, RF Power Transistor NPN Silicon
MRF455 60 W, 30 Mhz, RF Power Transistor NPN Silicon
MRF587 High-frequency Transistor NPN Silicon
MTH-50  Two-Way Power Divider, 1 - 100 MHZ
MTV-50PIN Two-way Power Dividers 1 - 100 MHZ And 40 - 400 MHZ
MY50  Triple Balanced Mixer
MY50A
MY50C
MY51  Triple-Balanced Mixer
MY52
MY63 Double-balanced Mixer
MY76  Double-Balanced Mixer
MY76H

MA40105-276 : 9.375 Ghz, Stripline Packaged Schottky Mixer Diode

MA46415-97 : VHF-KA BAND, 18 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE ; RoHS Compliant: RoHS

MA46617-96 : L-KA BAND, 2.15 pF, 45 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE

MLA2562-402A2 : 12800 MHz - 13300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 12800 to 13300 MHz ; Input VSWR: 1.8 1 ; Output VSWR: 1.8 1 ; Operating Temperature: -55 to 95 C (-67 to 203 F)

2662-1008-21 : 500 MHz - 2000 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 0.7 dB INSERTION LOSS Specifications: Frequency Range: 500 to 2000 MHz ; Insertion Loss: 0.7000 dB ; VSWR: 1.4 1 ; Impedance: 75 ohms ; Type: Single Pole Single Throw ; Operating Temperature: -55 to 95 C (-67 to 203 F)

2666-1003-42 : 500 MHz - 2000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.4 dB INSERTION LOSS Specifications: Frequency Range: 500 to 2000 MHz ; Insertion Loss: 1.4 dB ; VSWR: 1.5 1 ; Impedance: 50 ohms ; Type: Single Pole Double Throw ; Operating Temperature: -55 to 95 C (-67 to 203 F)

2666-1004-20 : 500 MHz - 2000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.4 dB INSERTION LOSS Specifications: Frequency Range: 500 to 2000 MHz ; Insertion Loss: 1.4 dB ; VSWR: 1.5 1 ; Impedance: 50 ohms ; Type: Single Pole Double Throw ; Operating Temperature: -55 to 95 C (-67 to 203 F)

2679-1003-01 : 500 MHz - 2000 MHz RF/MICROWAVE SGL POLE SEVEN THROW SWITCH, 1.6 dB INSERTION LOSS Specifications: Frequency Range: 500 to 2000 MHz ; Insertion Loss: 1.6 dB ; VSWR: 1.5 1 ; Type: SGL POLE SEVEN THROW SWITCH ; Operating Temperature: -55 to 95 C (-67 to 203 F)

Same catergory

2N1613 : NPN General Purpose Medium-power Transistors.

XN04502XN4502 : . Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Parameter Collector to base voltage Rating of Emitter to base voltage element Collector current Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Peak collector current Total power dissipation Overall Junction temperature Storage.

PBLS6003D : 60 V PNP BISS loadswitch PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required.

DIM1200DDM12-E : Half Bridge IGBT Module The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A..

PBSS4580PA : 80 V, 5.6 A NPN Low V_CEsat (BISS) Transistor NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5580PA..

D2018UKG4 : UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: ROHS COMPLIANT, CERAMIC, DP, 3 PIN ; Number of units in IC: 1.

KDS126E : 0.1 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 100 mA ; Package: TES6, 6 PIN ; Pin Count: 6 ; Number of Diodes: 4.

MMAD1103-LF : UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE. s: Diode Type: Transient Voltage Suppressor Diodes ; RoHS Compliant: RoHS ; Package: ROHS COMPLIANT, PLASTIC, SO-14 ; Pin Count: 14 ; Number of Diodes: 16.

PX102E3 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 1000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Resistance Range: 1000 ohms ; Power Rating: 0.0300 watts (4.02E-5 HP) ; Operating Temperature: -80 to 150 C (-112 to 302 F).

RL0510S-1R1-G : RESISTOR, CURRENT SENSE, THIN FILM, 0.125 W, 2 %, 200 ppm, 1.1 ohm, SURFACE MOUNT, 0402. s: Category / Application: Current Sensing, General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP, ROHS COMPLIANT ; Resistance Range: 1.1 ohms ; Tolerance: 2 +/- % ; Temperature Coefficient:.

SGA8343ZSQ : C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: GREEN, PLASTIC PACKAGE-4 ; Number of units in IC: 1.

SML60B16R3 : 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.4000 ohms ; Number of units in IC: 1.

UST0J101MDD1AE : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 6.3 microamps ; Mounting Style: Through Hole ; Operating Temperature:.

5940SA101JS : RESISTOR, POTENTIOMETER, WIRE WOUND, 10 TURN(S), 2 W, 100 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Technology / Construction: Wirewound ; Mounting / Packaging: Panel Mount (Bushing) ; Resistance Range: 100 ohms ; Tolerance: 5 +/- % ; Operating Temperature: -55 to 125 C (-67 to 257 F).

 
0-C     D-L     M-R     S-Z