Details, datasheet, quote on part number: PDM4M4060S-12
PartPDM4M4060S-12
CategoryMemory => SRAM => Modules => SRAM Module
Description256kx32 CMOS Static RAM Module
CompanyIXYS Corporation
DatasheetDownload PDM4M4060S-12 datasheet
  

 

Features, Applications
Features

High-density 8 megabit Static RAM module) Low profile 72-lead SIMM and Angled SIMM (Single In-line Memory Module) Very fast access time: 10 ns (max.) Surface mounted plastic components on an epoxy laminate (FR-4) substrate Single 5V (10%) power supply Multiple VSS pins and decoupling capacitors for maximum noise immunity Inputs/outputs directly TTL compatible

The PDM4M4060 is packaged a 72-lead SIMM (Single In-line Memory Module). The SIMM configuration allows 72 leads to be placed on a package 4.25" long and 0.35" wide. At only 0.650" high, this low-profile package is ideal for systems with minimum board spacing. The SIMM configuration allows use of angled sockets to reduce the effective module height further. The Angled SIMM configuration allows 72 leads to be placed on a package 4.255" long and 0.35" wide. At only 0.680" high, this low-profile package is ideal for systems with minimum board spacing. All inputs and outputs of the PDM4M4060 are TTL compatible and operate from a single 5V supply. Full asynchronous circuitry requires no clock or refresh for operation and provides equal access and cycle times for ease of use. Four identification pins (PD3-PD0) are provided for applications in which different density versions of the module are used. In this way, the target system can read the respective levels PD3-PD0 to determine a 256K depth.

Description

The x 32 static RAM module constructed on an epoxy laminate (FR-4) substrate using eight x 4 static RAMs in plastic SOJ packages. Availability of four chip select lines (one for each of two RAMs) provides byte access. The PDM4M4060 is available with access times as fast 15 ns with minimal power consumption.

Data Inputs/Outputs Addresses Chip Selects Write Enable Output Enable Depth Identification Power Ground No Connect

NOTE: 1. Pins 4, 5, and 7 (PD3-PD0) are read by the user to determine the density of the module. PD0, PD1 reads VSS and PD2, PD3 reads OPEN then the module has a 256K depth.

Mode Deselect/ Power-down Read Write Deselect

Symbol VTERM TBIAS TSTG TA PT IOUT Rating Terminal Voltage with Respect to VSS Temperature Under Bias Storage Temperature Operating Temperature Power Dissipation DC Output Current Com'l. 1.0 50 Ind. 1.0 50 Unit W mA

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Symbol VCC VSS Commercial Parameter Supply Voltage Supply Voltage Ambient Temperature Min. 4.75 0 Typ. 0 25 Max. 0 70 Unit V C


 

Related products with the same datasheet
PDM4M4060S-10
PDM4M4060S-15
PDM4M4060S-20
PDM4M4060S-25
PDM4M4060S10AM
PDM4M4060S10M
PDM4M4060S12AM
PDM4M4060S12M
PDM4M4060S15AM
PDM4M4060S15M
PDM4M4060S20AM
Some Part number from the same manufacture IXYS Corporation
PDM4M4060S-15 256kx32 CMOS Static RAM Module
PDM4M4110 512kx32 CMOS Static RAM Module
PDM4M4120 1mx32 CMOS Static RAM Module
UGB3132AD
VBE100-06NO7
VBE100-12NO7
VBE17-06NO7 Eco-pac(tm) Single Phase Rectifier Bridge With Fast Recovery Epitaxial Diodes (fred): 600v, 27a
VBE17-12NO7
VBE20 Single Phase Rectifier Bridge With Fast Recovery Epitaxial Diodes (fred)
VBE20-20NO1
VBE26-06NO7 Eco-pac(tm) Single Phase Rectifier Bridge With Fast Recovery Epitaxial Diodes (fred): 600v, 44a
VBE26-12NO7
VBE55-06NO7
VBE55-12NO7
VBO105 Single Phase Rectifier Bridge
VBO105-08NO7 800V Single Phase Rectifier Bridge
VBO125 Single Phase Rectifier Bridge
VBO125-08NO7 800V Single Phase Rectifier Bridge
VBO13-08NO2 Single Phase Rectifier Bridge
VBO130
VBO130-08NO7 800V Single Phase Rectifier Bridge

CS300-16IO3 : Cs300-16io3

IXMS150 : High Performance Dual PWM Microstepping Controller

IXSH20N60AU1 : Low Voltage < 600 Volts Low V Ce(sat) Igbt With Diode High Speed Igbt With Diode Combi Packs

PDM31256SA12SOI : 3.3v 256k Static RAM 32kx8-bit

PDM41258SA8SOITR : 256k Static RAM 64kx4-bit

IXZR16N60A : 600V (max) Switch Mode MOSFETS The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching, including laser driver, induction heating, switch mode power supplies and other switching industrial applications.e

IXTQ26P20P : MOSFET -26.0 Amps -200V 0.170 Rds Specifications: Manufacturer: IXYS ; RoHS:  Details ; Transistor Polarity: P-Channel ; Drain-Source Breakdown Voltage: - 200 V ; Gate-Source Breakdown Voltage: +/- 20 V ; Continuous Drain Current: 26 A ; Resistance Drain-Source RDS (on): 0.17 Ohms ; Configuration: Single ; Maximum Operating Tem

IXGR45N120 : Igbt - Single Discrete Semiconductor Product 90A 1200V - Standard; IGBT 90A 1200V ISOPLUS247 Specifications: Input Type: Standard ; Voltage - Collector Emitter Breakdown (Max): 1200V ; Current - Collector (Ic) (Max): 90A ; Vce(on) (Max) @ Vge, Ic: - ; Power - Max: - ; Mounting Type: Through Hole ; Package / Case: ISOPLUS247 ; Packaging: Tube ; Lead Free Status: Lead Free ; RoHS Status: RoH

IXFD60N20F-74 : 200 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0420 ohms ; Package Type: 0.377 X 0.281 INCH, DIE ; Number of units in IC: 1

IXTH30N25 : 30 A, 250 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 250 volts ; rDS(on): 0.0750 ohms ; Number of units in IC: 1

IXTT21N50Q : 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.2500 ohms ; Package Type: PLASTIC, TO-268, 3 PIN ; Number of units in IC: 1

 
0-C     D-L     M-R     S-Z