Details, datasheet, quote on part number: PDM41258SA7SO
PartPDM41258SA7SO
CategoryMemory => SRAM => Modules => 256 KB
Description256k Static RAM 64kx4-bit
CompanyIXYS Corporation
DatasheetDownload PDM41258SA7SO datasheet
  

 

Features, Applications
Features
Description

The is a high-performance CMOS static RAM organized x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE goes LOW. The PDM41258 operates from a single +5V power supply and all the inputs and outputs are fully TTLcompatible. The PDM41258 comes in two versions, the standard power version PDM41258SA and a low power version the PDM41258LA. The two versions are functionally the same and only differ in their power consumption. The PDM41258 is available 24-pin 300-mil plastic SOJ for surface mount applications.

High speed access times Com'l: and 15 ns Ind'l: 10, 12 and 15 ns Low power operation (typical) - PDM41258SA Active: 400 mW Standby: - PDM41258LA Active: 350 mW Standby: 25 mW Single +5V (10%) power supply TTL compatible inputs and outputs Packages Plastic SOJ (300 mil) - SO

Name WE CE VCC VSS Description Address Inputs Data Inputs and Outputs Write Enable Input Chip Enable Input Power (+5V) Ground

H L I/O Hi-Z DOUT DIN MODE Standby Read Write

Symbol TTERM TBIAS TSTG PT IOUT Tj Rating Terminal Voltage with Respect to VSS Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Maximum Junction Temperature (2) Com'l. 55 to Ind. 65 to Unit mA C

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.2. Appropriate thermal calculations should be performed in all cases and specifically for those where the chosen package has a large thermal resistance (e.g., TSOP). The calculation should be of the form: P * ja, where Ta is the ambient temperature, P is average operating power and ja the thermal resistance of the package. For this product, use the following ja value: SOJ: 83o C/W

Symbol VCC VSS Commercial Industrial Parameter Supply Voltage Supply Voltage Ambient Temperature Ambient Temperature Min. Typ. Max. Unit V C

PDM41258SA Symbol ILI ILO VIL VIH VOL VOH Parameter Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 8 mA, VCC = Min. IOL = 10 mA, VCC = Min. IOH = 4 mA, VCC = Min. Test Conditions VCC = MAX., VIN = VSS to VCC VCC= MAX., CE = VIH, VOUT = VSS to VCC Com'l/ Ind. Com'l/ Ind. Min. Max. PDM41258LA Min. Max. Unit A

NOTE: 1. VIL(min) = 3.0V for pulse width less than 20 ns.

-7 Symbol Parameter ICC Operating Current CE = VIL f = fMAX = 1/tRC VCC = Max IOUT 0 mA ISB Standby Current CE = VIH f = fMAX = 1/tRC VCC = Max ISB1 Full Standby Current CE VCC 0.2V f=0 VCC = Max VIN VCC or 0.2V Power SA LA Com'l. 190 -8 Com'l. 200 180 Ind. 190 -10 Com'l. 190 170 Ind. 180 -12 Com'l. 180 160 Ind. 170 -15 Com'l. 170 150 Ind. 180 160 Units mA

SHADED AREA = PRELIMINARY DATA NOTE:All values are maximum guaranteed values.

 

Related products with the same datasheet
PDM41258LA-10
PDM41258LA-10I
PDM41258LA-12
PDM41258LA-12B
PDM41258LA-12I
PDM41258LA-15
PDM41258LA-15B
PDM41258LA-15I
PDM41258LA-20
PDM41258LA-20B
PDM41258LA-20I
PDM41258LA-25
Some Part number from the same manufacture IXYS Corporation
PDM41258SA7SOTR 256k Static RAM 64kx4-bit
PDM41532 64kx16 CMOS Static RAM
PDM4M4030 64kx32 CMOS Static RAM Module
PDM4M4040 128kx32 CMOS Static RAM Module
PDM4M4050 256kx32 Bicmos/cmos Static RAM Module
PDM4M4060 256kx32 CMOS Static RAM Module
PDM4M4110 512kx32 CMOS Static RAM Module

DSS2X121-0045B : Power Power Schottky Rectifier

IXST30N60C : Low Voltage < 600 Volts High Speed Igbt

IXUC100N055 : Trench Gate Power MOSFETs 55V Trench Power MOSFET

VHF36-16IO5 : Half Controlled Single Phase Rectifier Bridge With Freewheeling Diode

ZY180R : Discrete Semiconductor Modules Keyed Twin plug Specifications: Manufacturer: IXYS ; RoHS:  Details ; Packaging: Bulk ; Factory Pack Quantity: 1

IXGQ180N33TC : Igbt - Single Discrete Semiconductor Product 180A 330V - Standard; IGBT 180A 330V TO-3P Specifications: Input Type: Standard ; Voltage - Collector Emitter Breakdown (Max): 330V ; Current - Collector (Ic) (Max): 180A ; Vce(on) (Max) @ Vge, Ic: - ; Power - Max: - ; Mounting Type: Through Hole ; Package / Case: TO-3P-3, SC-65-3 ; Packaging: Tube ; Lead Free Status: Lead Free ; RoHS Status

DSB10I45PM : Diodes, Rectifier - Single Discrete Semiconductor Product 10A 45V Schottky; DIODE SCHOTTKY 45V 10A TO-220FP Specifications: Diode Type: Schottky ; Voltage - DC Reverse (Vr) (Max): 45V ; Current - Average Rectified (Io): 10A ; Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A ; Reverse Recovery Time (trr): - ; Current - Reverse Leakage @ Vr: 7mA @ 45V ; Speed: Fast Recovery =< 500ns,>200mA (Io) ; Mounting

IXTD36P10-5B : 100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0800 ohms ; Package Type: 0.259 X 0.259 INCH, DIE ; Number of units in IC: 1

IXTH20N65X : MOSFET 650V/9A Power MOSFET IXYS X-Class Power MOSFETs are high-power density N-Channel Enhancement Mode MOSFETs. They are easy to mount and have a low RDS(ON) and QG with a low package inductance. Typical applications include switch-mode and resonant-mode power supplies, DC-DC converters and PFC circuits.Specif

 
0-C     D-L     M-R     S-Z