Details, datasheet, quote on part number: PDM41258LA10SOITR
PartPDM41258LA10SOITR
CategoryMemory => SRAM => Modules => 256 KB
Description256k Static RAM 64kx4-bit
CompanyIXYS Corporation
DatasheetDownload PDM41258LA10SOITR datasheet
  

 

Features, Applications
Features
Description

The is a high-performance CMOS static RAM organized x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE goes LOW. The PDM41258 operates from a single +5V power supply and all the inputs and outputs are fully TTLcompatible. The PDM41258 comes in two versions, the standard power version PDM41258SA and a low power version the PDM41258LA. The two versions are functionally the same and only differ in their power consumption. The PDM41258 is available 24-pin 300-mil plastic SOJ for surface mount applications.

High speed access times Com'l: and 15 ns Ind'l: 10, 12 and 15 ns Low power operation (typical) - PDM41258SA Active: 400 mW Standby: - PDM41258LA Active: 350 mW Standby: 25 mW Single +5V (10%) power supply TTL compatible inputs and outputs Packages Plastic SOJ (300 mil) - SO

Name WE CE VCC VSS Description Address Inputs Data Inputs and Outputs Write Enable Input Chip Enable Input Power (+5V) Ground

H L I/O Hi-Z DOUT DIN MODE Standby Read Write

Symbol TTERM TBIAS TSTG PT IOUT Tj Rating Terminal Voltage with Respect to VSS Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Maximum Junction Temperature (2) Com'l. 55 to Ind. 65 to Unit mA C

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.2. Appropriate thermal calculations should be performed in all cases and specifically for those where the chosen package has a large thermal resistance (e.g., TSOP). The calculation should be of the form: P * ja, where Ta is the ambient temperature, P is average operating power and ja the thermal resistance of the package. For this product, use the following ja value: SOJ: 83o C/W

Symbol VCC VSS Commercial Industrial Parameter Supply Voltage Supply Voltage Ambient Temperature Ambient Temperature Min. Typ. Max. Unit V C

PDM41258SA Symbol ILI ILO VIL VIH VOL VOH Parameter Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 8 mA, VCC = Min. IOL = 10 mA, VCC = Min. IOH = 4 mA, VCC = Min. Test Conditions VCC = MAX., VIN = VSS to VCC VCC= MAX., CE = VIH, VOUT = VSS to VCC Com'l/ Ind. Com'l/ Ind. Min. Max. PDM41258LA Min. Max. Unit A

NOTE: 1. VIL(min) = 3.0V for pulse width less than 20 ns.

-7 Symbol Parameter ICC Operating Current CE = VIL f = fMAX = 1/tRC VCC = Max IOUT 0 mA ISB Standby Current CE = VIH f = fMAX = 1/tRC VCC = Max ISB1 Full Standby Current CE VCC 0.2V f=0 VCC = Max VIN VCC or 0.2V Power SA LA Com'l. 190 -8 Com'l. 200 180 Ind. 190 -10 Com'l. 190 170 Ind. 180 -12 Com'l. 180 160 Ind. 170 -15 Com'l. 170 150 Ind. 180 160 Units mA

SHADED AREA = PRELIMINARY DATA NOTE:All values are maximum guaranteed values.

 

Related products with the same datasheet
PDM41258LA-10
PDM41258LA-10I
PDM41258LA-12
PDM41258LA-12B
PDM41258LA-12I
PDM41258LA-15
PDM41258LA-15B
PDM41258LA-15I
PDM41258LA-20
PDM41258LA-20B
PDM41258LA-20I
PDM41258LA-25
Some Part number from the same manufacture IXYS Corporation
PDM41258LA10SOITY 256k Static RAM 64kx4-bit
PDM41258SA
PDM41258SA10SO 256k Static RAM 64kx4-bit
PDM41532 64kx16 CMOS Static RAM

40N30A : Low Voltage < 600 Volts Hiperfast(tm) Igbt

PDM41257LA-20I : Paradigm SRAM

IXFN70N60Q2 : High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances

DWGS20-025C : Rectifier Diodes & FRED

IXFM6N90 : Hiperfet Power Mosfets

IXCY20M45 : Pmic - Current Regulation/management Integrated Circuit (ics) Tube 20mA -; IC CURRENT REGULATOR DPAK Specifications: Voltage - Input: - ; Current - Output: 20mA ; Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 ; Packaging: Tube ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

IXFD80N20Q-8X : 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0180 ohms ; Package Type: 0.480 X 0.283 INCH, DIE ; Number of units in IC: 1

IX6610T : Gate Drivers Xformer Coupled Drvr Logic Interface IXYS IX6610 Transformer Coupled Driver Logic Interface is a primary side logic interface device. The IX6610 has a dual-channel bidirectional transformer interface that drives a secondary side intelligent IGBT driver. The device features a TTL Logic level micro-controller interface, a pulse transf

 
0-C     D-L     M-R     S-Z