|Category||Memory => SRAM => Modules => 256 KB|
|Description||256k Static RAM 256kx1-bit|
|Datasheet||Download PDM41257SA7SOTR datasheet
The is a high-performance CMOS static RAM organized x 1 bit. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE goes LOW. The PDM41257 operates from a single +5V power supply and all the inputs and outputs are fully TTLcompatible. The PDM41257 comes in two versions, the standard power version PDM41257SA and a low power version the PDM41257LA. The two versions are functionally the same and only differ in their power consumption. The PDM41257 is available 24-pin 300-mil plastic SOJ for surface mount applications.
High-speed access times Com'l: and 15 ns Industrial: 10, 12 and 15 ns Low power operation (typical) - PDM41257SA Active: 400 mW Standby: - PDM41257LA Active: 350 mW Standby: 25 mW Single +5V (±10%) power supply TTL compatible inputs and outputs Packages Plastic SOJ (300 mil) - SO
Name A17-A0 DIN DOUT WE CE VCC VSS Description Address Inputs Data Input Data Output Write Enable Input Chip Enable Input Power (+5V) GroundH L DOUT Hi-Z DOUT Hi-Z MODE Standby Read Write
Symbol TTERM TBIAS TSTG PT IOUT Tj Rating Terminal Voltage with Respect to VSS Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Maximum Junction Temperature (2) Com'l. 55 to Ind. 65 to Unit mA °C
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Appropriate thermal calculations should be performed in all cases and specifically for those where the chosen package has a large thermal resistance (e.g., TSOP). The calculation should be of the form: P * ja, where Ta is the ambient temperature, P is average operating power and ja the thermal resistance of the package. For this product, use the following ja value: SOJ: 83o C/W
Symbol VCC VSS Commercial Industrial Parameter Supply Voltage Supply Voltage Ambient Temperature Ambient Temperature Min. Typ. Max. Unit V °C
PDM41257SA Symbol ILI ILO VIL VIH VOL VOH Parameter Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 8 mA, VCC = Min. IOL = 10 mA, VCC = Min. IOH = 4 mA, VCC = Min. Test Conditions VCC = MAX., VIN = VSS to VCC VCC= MAX., CE = VIH, VOUT = VSS to VCC Com'l/ Ind. Com'l/ Ind. Min. 5 0.5NOTE: 1. VIL(min) = 3.0V for pulse width less than 20 ns.
-7 Symbol Parameter ICC Operating Current CE = VIL f = fMAX = 1/tRC VCC = Max IOUT 0 mA ISB Standby Current CE = VIH f = fMAX = 1/tRC VCC = Max ISB1 Full Standby Current CE VCC 0.2V f=0 VCC = Max VIN VCC or 0.2V Power SA LA Com'l. 190 -8 Com'l. 200 180 Ind. 190 -10 Com'l. 190 170 Ind. 180 -12 Com'l. 180 160 Ind. 170 -15 Com'l. 170 150 Ind. 180 160 Units mASHADED AREA = PRELIMINARY DATA NOTE: All values are maximum guaranteed values.
|Related products with the same datasheet|
|Some Part number from the same manufacture IXYS Corporation|
|PDM41257SA7SOTY 256k Static RAM 256kx1-bit|
|PDM41258 256k Static RAM 64kx4-bit|
|PDM41258SA10SO 256k Static RAM 64kx4-bit|
55N120A : High Voltage 1200 Volts High Voltage Igbt With Diode
IXBD4410 : Power Management IC
IXFH75N10Q : HiperFET(tm) Power MOSFET Q-class: 100v, 75a
VMO450-02F : N-channel Enhancement Mode Megamos TM Fet Module
DE375-102N12A : 500V (max) Switch Mode MOSFETS The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching, including laser driver, induction heating, switch mode power supplies and other switching industrial applications.eeeeeeeeee
IXTP110N055T2 : Polar N-channel MOSFETs International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
IXFX48N60Q3 : Fet - Single Discrete Semiconductor Product 48A 600V 1000W Through Hole; MOSFET N-CH 600V 48A PLUS247 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 600V ; Current - Continuous Drain (Id) @ 25° C: 48A ; Rds On (Max) @ Id, Vgs: 140 mOhm @ 24A, 10V ; Input Capacitance (Ciss) @ Vds: 7020pF @ 25V ; Power - Max: 1000W ; Packaging: T
IXFD12N100Q-7Q : 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 1.05 ohms ; Package Type: 0.351 X 0.284 INCH, DIE ; Number of units in IC: 1