Details, datasheet, quote on part number: IDT74FCT810CTEB
PartIDT74FCT810CTEB
Category
DescriptionFast CMOS Buffer/clock Driver
CompanyIntegrated Device Technology, Inc.
DatasheetDownload IDT74FCT810CTEB datasheet
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Features, Applications

0.5 MICRON CMOS technology Guaranteed low skew < 600ps (max.) Very low duty cycle distortion < 700ps (max.) Low CMOS power levels TTL compatible inputs and outputs TTL level output voltage swings High drive: 32mA IOH, 48mA IOL Two independent output banks with 3-state control One 1:5 Inverting bank One 1:5 Non-Inverting bank ESD > 2000V per MIL-STD-883, Method > 200V using machine model = 0) Available in DIP, SOIC, SSOP, QSOP, CERPACK and

The is a dual bank inverting/ noninverting clock driver built using advanced dual metal CMOS technology. It consists of two banks of drivers, one inverting and one non-inverting. Each bank drives five output buffers from a standard TTL-compatible input. The IDT54/ 74FCT810BT/CT have low output skew, pulse skew and package skew. Inputs are designed with hysteresis circuitry for improved noise immunity. The outputs are designed with TTL output levels and controlled edge rates to reduce signal noise. The part has multiple grounds, minimizing the effects of ground inductance.

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

Pin Names OEA, OEB INA, INB OAn, OBn Description 3-State Output Enable Inputs (Active LOW) Clock Inputs Clock Outputs

Symbol Rating VTERM(2) Terminal Voltage with Respect to GND VTERM(3) Terminal Voltage with Respect to GND TA Operating Temperature TBIAS Temperature Under Bias TSTG Storage Temperature I OUT DC Output Current Commercial to +7.0 Military to +7.0 Unit V

Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 4.5 5.5 Max. Unit pF 8.0

NOTE: 1. This parameter is measured at characterization but not tested.

3103 lnk 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals. 3. Output and I/O terminals.

Following Conditions Apply Unless Otherwise Specified Commercial: 5%; Military: to +125C, VCC 10%

Symbol VIH VIL L I OZH I OZL II VIK I OS VOH Parameter Input HIGH Level Input LOW Level Input HIGH Current (5) Input LOW Current (5) High Impedance Output Current (3-State Output pins) (5) Input HIGH Current (5) Clamp Diode Voltage Short Circuit Current Output HIGH Voltage VCC = Min., IIN= 18mA VCC VO = GND VCC = Min. VIN = VIH or VIL = 12mA MIL. = 15mA COM'L. = 24mA MIL. 32mA COM'L.(4) VCC = Min. = 32mA MIL. VIN = VIH or VIL = 48mA COM'L. VCC = 0V, VIN VO 4.5V VCC = Max., VIN = GND V CC Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VCC = Max. VCC = Max. = 0.5V VCC = Max., VI = VCC (Max.) Min. Typ.(2) Max. mV A Unit mA V

Output LOW Voltage Input/Output Power Off Leakage(5) Input Hysteresis for all inputs Quiescent Power Supply Current

NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc 5.0V, +25C ambient. 3. Not more than one output should be tested at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second. 5. The test limit for this parameter = 55C.

Symbol ICC ICCD Parameter Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current (4) VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OEA = OEB = GND 50% Duty Cycle VCC = Max. Outputs Open fo= 25MHz 50% Duty Cycle OEA = GND, OEB =VCC VCC = Max. Outputs Open 50MHz 50% Duty Cycle OEA = OEB = GND VIN = VCC VIN = GND Test Conditions(1) Min. 0.5 60 Max. 2.0 100 Unit mA A/ MHz/bit

NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC 5.0V, +25C ambient. 3. Per TTL driven input; (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fONO) ICC = Quiescent Current (ICCL, ICCH and ICCZ) ICC = Power Supply Current for a TTL High Input (VIN DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fO= Output Frequency NO= Number of Outputs at fO All currents are in milliamps and all frequencies are in megahertz.


 

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