|Category||Logic => Line Driver/Receivers => CMOS/BiCMOS->FCT/FCT-T Family|
|Description||Fast CMOS 20-bit Buffer|
|Company||Integrated Device Technology, Inc.|
|Datasheet||Download IDT54FCT162827 datasheet
MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1µ A (max.) ESD > 2000V per MIL-STD-883, Method > 200V using machine model 0) 25 mil pitch SSOP, 19.6 mil pitch TSSOP, 15.7 mil pitch TVSOP and 25 mil pitch CERPACK packages Extended commercial range to +85°C VCC 5V ±10% Balanced Output Drivers: ±24mA (commercial) ±16mA (military) Reduced system switching noise Typical VOLP (Output Ground Bounce) 0.6V at VCC = 25°C
The FCT162827AT/BT/CT/ET 20-bit buffers are built using advanced dual metal CMOS technology. These 20-bit bus drivers provide highperformance bus interface buffering for wide data/address paths or buses carrying parity. Two pair of NAND-ed output enable controls offer maximum control flexibility and are organized to operate the device as two 10-bit buffers or one 20-bit buffer. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin. The FCT162827AT/BT/CT/ET has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot, and controlled output fall timesreducing the need for external series terminating resistors. The FCT162827AT/BT/CT/ET are plug-in replacements for the FCT16827AT/BT/CT/ET and ABT16827 for on-board interface applications.
Description Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Storage Temperature DC Output Current
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. All device terminals except FCT162XXXT Output and I/O terminals. 3. Output and I/O terminals for FCT162XXXT.
Symbol CIN COUT Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 3.5 Max. 6 8 Unit pFNOTE: 1. This parameter is measured at characterization but not tested.
Pin Names xOEx xAx xYx Description Output Enable Inputs (Active LOW) Data Inputs 3-State Outputs
NOTE: H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care Z = High-Impedance
Following Conditions Apply Unless Otherwise Specified: Commercial: to +85°C, VCC 5.0V ±10%; Military: to +125°C, VCC 5.0V ±10%
Symbol VIH VIL IIH IIL IOZH IOZL VIK IOS VH ICCL ICCH ICCZ Parameter Input HIGH Level Input LOW Level Input HIGH Current (Input pins)(5) Input HIGH Current (I/O pins)(5) Input LOW Current (Input pins)(5) Input LOW Current (I/O pins)(5) High Impedance Output Current (3-State Output pins)(5) Clamp Diode Voltage Short Circuit Current Input Hysteresis Quiescent Power Supply Current VCC = Max. VIN = GND or VCC = Min., IIN = 18mA VCC = Max., = GND(3) VCC = Max. VI = GND Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VI = VCC Min. 80 Typ.(2) Max. mV µA Unit V µA
Symbol IODL IODH VOH VOL Parameter Output LOW Current Output HIGH Current Output HIGH Voltage Output LOW Voltage Test Conditions(1) VCC = 5V, VIN = VIH or VIL, = 1.5V(3) VCC = 5V, VIN = VIH or VIL, = 1.5V(3) VCC = Min. VIN = VIH or VIL VCC = Min. VIN = VIH or VIL IOH = 16mA MIL. IOH = 24mA COM'L. IOL = 16mA MIL. IOL = 24mA COM'L
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC 5.0V, +25°C ambient. 3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second. 5. The test limit for this parameter = -55°C.
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