Details, datasheet, quote on part number: BCR523E6327
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionNPN Silicon Digital Transistor
CompanyInfineon Technologies Corporation
DatasheetDownload BCR523E6327 datasheet
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Features, Applications

Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg

Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, 79 C Junction temperature Storage temperature

1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage = 100 A, = 0 Collector-base breakdown voltage = 10 A, = 0 Collector cutoff current VCB = 0 Emitter cutoff current VEB 0 DC current gain = 50 mA, VCE 5 V Collector-emitter saturation = 50 mA, 2.5 mA Input off voltage = 100 A, VCE 5 V Input on Voltage = 10 mA, VCE 0.3 V Input resistor Resistor ratio R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO typ. max.


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