Details, datasheet, quote on part number: BCR410W
DescriptionConstant Current Sources For Improved Biasing of RF Transistors And Mmics
CompanyInfineon Technologies Corporation
DatasheetDownload BCR410W datasheet
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Features, Applications
Supplies stable bias current from 1.8V operating
Maximum Ratings Parameter Supply voltage Output current
Total power dissipation, 110 C Junction temperature Storage temperature
Thermal Resistance Junction - soldering point 1) RthJS
1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics = 25C, unless otherwise specified Parameter DC Characteristics Additional current consumption 400 A Symbol min. Values typ. max. Unit

DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage Voltage drop 10 mA Change of IC versus hFE = 50 Change of IC versus 3 V Change of IC versus TA VSmin Vdrop 1.8 110 tbd V mV

Collector Current = f (VS) of stabilized NPN Transistor Parameter Rext.


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