Details, datasheet, quote on part number: BCR400WE6327
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionActive Bias Controller
CompanyInfineon Technologies Corporation
DatasheetDownload BCR400WE6327 datasheet
Find where to buy


Features, Applications
Supplies stable bias current even at low battery
and FET's from less than up to more than 200mA
Ideal supplement for Sieget and other transistors also usable as current source to 5mA
(ENPN, BNPN, CNPN are electrodes of a stabilized NPN transistor)

Maximum Ratings Parameter Source voltage Control current Control voltage Reverse voltage between all terminals Total power dissipation, 117 C Junction temperature Storage temperature Symbol VS IContr. VContr. VR Ptot Tj Tstg Value mW C Unit mA V

Thermal Resistance Junction - soldering point 1) RthJS
1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA=25C, unless otherwise specified Parameter DC Characteristics Additional current consumption 3 V Lowest stabilizing current 3 V Imin 40 A Symbol min. Values typ. max. Unit

DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage IB (NPN) < 0.5mA Voltage drop (VS - VCE) 25 mA Change of IC versus hFE = 50 Change of IC versus 3 V Change of IC versus TA Vdrop VSmin 1.6 V

Collector current = f (hFE ) IC and hFE refer to stabilized NPN Transistor Parameter Rext.
Collector Current = f (VS) of stabilized NPN Transistor Parameter Rext.


Related products with the same datasheet
Some Part number from the same manufacture Infineon Technologies Corporation
BCR400WE6433 Active Bias Controller
BCR401R Ssic Constant Current Sources For Driving Leds
BCR402 Light Emitting Diode ( Led ) Driver ic Provides Constant Led Current Independent of Supply Voltage Variation
BCR402R Ssic Constant Current Sources For Driving Leds
BCR402U Led Driver ( Supplies Stable Bias Current Even at Low Battery Voltage )
BCR410W Constant Current Sources For Improved Biasing of RF Transistors And Mmics
BCR42PN Complex af Transistors With Built-in Resistor Network
BCR48PN Npn/pnp Silicon Digital Transistor Array
BCR503 NPN Silicon Digital Transistor
BCR523U Complex af Transistors With Built-in Resistor Networks
BCR533 NPN Silicon Digital Transistor
BCR555 PNP Silicon Digital Transistor

BUZ11A : Sipmos(r) Power Transistor: 50v, 26a

HYB3164165TL-50 : Asynchronous->3.3V EDO 4M X 16bit DRAM

PMB5699 : Smarti u Single - Chip W-cdma/umts Transceiver

SMBTA42M : NPN Silicon High-voltage Transistor

TDA5103A : Ask Transmitter 345 MHZ

HYB18T1G160BF-5 : 1-Gbit DDR2 SDRAM The 1-Gbit DDR2 DRAM is a high-speed Double-Data- Rate-Two CMOS Synchronous DRAM device containing 1,073,741,824 bits and internally configured as an octal-bank DRAM.

HYB18S256160TG-75 : Memory Spectrum

IDB06S60C : Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode Specifications: Manufacturer: Infineon ; Product Category: Schottky (Diodes & Rectifiers) ; RoHS:  Details ; Product: Schottky Silicon Carbide Diodes ; Packaging: Reel ; Factory Pack Quantity: 1000 ; other name: IDB06S60CXT

BSO051N03MS G : Fet - Single Discrete Semiconductor Product 14A 30V 1.56W Surface Mount; MOSFET N-CH 30V 14A DSO-8 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 30V ; Current - Continuous Drain (Id) @ 25 C: 14A ; Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 18A, 10V ; Input Capacitance (Ciss) @ Vds: 4300pF @ 15V ; Power - Max: 1.56W ; Packaging: T

SAF-XE167H-48F66LAC : 16-BIT, FLASH, 66 MHz, RISC MICROCONTROLLER, PDSO38 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 40 MHz ; ROM Type: Flash ; Supply Voltage: 3 to 5.5 volts ; I/O Ports: 28 ; Package Type: TSSOP, Other, 0.50 MM PITCH, GREEN, PLASTIC, TSSOP-38 ; Operating Range: Industrial ; Pin Count: 38 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ;

0-C     D-L     M-R     S-Z