Details, datasheet, quote on part number: BCR198T
CategoryDiscrete => Transistors => Bipolar => General Purpose => PNP
DescriptionPNP Silicon Digital Transistor
CompanyInfineon Technologies Corporation
DatasheetDownload BCR198T datasheet
Cross ref.Similar parts: PDTA144EM, DTA114EETL, DTA143EETL, DTA123EETL, DTA124EETL, DTA144EETL, DTA115EETL, DTB543EETL
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Features, Applications

PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor = 47k For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power TS 75C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point BCR198W SEMB2

1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V

= 100 A, = 0 Collector-base breakdown voltage = 10 A, = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1/R 2


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