Details, datasheet, quote on part number: BCR196E6433
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionPNP Silicon Digital Transistor
CompanyInfineon Technologies Corporation
DatasheetDownload BCR196E6433 datasheet


Features, Applications

Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg

Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, 102 C Junction temperature Storage temperature

1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage = 100 A, = 0 Collector-base breakdown voltage = 10 A, = 0 Collector cutoff current VCB = 0 Emitter cutoff current VEB 0 DC current gain = 5 mA, VCE 5 V Collector-emitter saturation = 10 mA, 0.5 mA Input off voltage = 100 A, VCE 5 V Input on Voltage = 2 mA, VCE 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency = 10 mA, VCE = 100 MHz Collector-base capacitance VCB = 1 MHz Ccb R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO typ. max.

Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)


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IPW90R1K0C3 : Fet - Single Discrete Semiconductor Product 5.7A 900V 89W Through Hole; MOSFET N-CH 900V 5.7A TO-247 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 900V ; Current - Continuous Drain (Id) @ 25 C: 5.7A ; Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V ; Input Capacitance (Ciss) @ Vds: 850pF @ 100V ; Power - Max: 89W ; Packaging: Tube

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