Details, datasheet, quote on part number: BCR191SE6433
CategoryDiscrete => Transistors => Bipolar => General Purpose
TitleGeneral Purpose
DescriptionPNP Silicon Digital Transistor Array
CompanyInfineon Technologies Corporation
DatasheetDownload BCR191SE6433 datasheet


Features, Applications

Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg

Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, 115 C Junction temperature Storage temperature

Thermal Resistance Junction - soldering point 1) RthJS
1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage = 100 A, = 0 Collector-base breakdown voltage = 10 A, = 0 Emitter-base breakdown voltage = 10 A, = 0 Collector cutoff current VCB = 0 Emitter cutoff current VEB 0 DC current gain = 5 mA, VCE 5 V Collector-emitter saturation = 10 mA, 0.5 mA Input off voltage = 100 A, VCE 5 V Input on Voltage = 2 mA, VCE 0.3 V Input resistor Resistor ratio R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.


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