|Category||Memory => SRAM => Async. SRAM|
|Company||Integrated Circuit Solution|
|Datasheet||Download IC63LV1024-10TI datasheet
|x 8 Hight Speed SRAM with 3.3V Central Power
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.FEATURES
High-speed access times: 10, 12 and 15 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 3.3V power supply Packages available: 32-pin 300mil SOJ 32-pin 400mil SOJ 36-pin TF-BGA (6mmx8mm)
by 8-bit CMOS static RAM in revolutionary pinout. The IC63LV1024 is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down 250 µW (typical) with CMOS input levels. The IC63LV1024 operates from a single 3.3V power supply and all inputs are TTL-compatible. The IC63LV1024 is available 32-pin 300mil SOJ, 400mil SOJ, TSOP-1 (8mmx13.4mm), and 36-pin TF-BGA (6mmx8mm).
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
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