Details, datasheet, quote on part number: GM72V66841ET
PartGM72V66841ET
CategoryMemory => DRAM => SDR SDRAM => 64 Mb
Description2,097,152 Word X 8 Bit X 4 Bank Synchronous Dynamic RAM
CompanyHynix Semiconductor
DatasheetDownload GM72V66841ET datasheet
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Features, Applications

Description

The is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency to 143 Mhz.

VCC DQ0 VCCQ NC DQ1 VSSQ NC DQ2 VCCQ NC DQ3 VSSQ NC VCC NC /WE /CAS /RAS /CS A2 A3 VCC
Features

* PC133/PC100/PC66 Compatible * 3.3V single Power supply * LVTTL interface * Max Clock frequency * 4,096 refresh cycle per ms * Two kinds of refresh operation Auto refresh / Self refresh * Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP * Programmable CAS latency Banks can operate independently or simultaneously * Burst read/burst write or burst read/single write operation capability * Input and output masking by DQM input * One Clock of back to back read or write command interval * Synchronous Power down and Clock suspend capability with one Clock latency for both entry and exit * JEDEC Standard 54Pin 400mil TSOP II Package

CLK CKE CS RAS CAS ~BA1/A12 DQ0~DQ7 DQM VCCQ VSSQ VCC VSS NC Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address input Address input or Auto Precharge Bank select Data input / Data output Data input / output Mask V CC for V SS for DQ Power for internal circuit Ground for internal circuit No Connection

This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any -1responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/Apr.01


Parameter Voltage on any pin relative to VSS Supply voltage relative V SS Short circuit output current Power dissipation Operating temperature Storage temperature Notes : 1. Respect VS S Symbol CC I OUT PT Topr Tstg Value Vcc+0.5 4.6 (max)) to +125 Unit W C Note 1

Parameter Supply voltage V SS, VSSQ Input high voltage Input low voltage Notes : 1. All voltage referred to V SS. V IH (max) = 5.6V for pulse width V IL (min) = -2.0V for pulse width 2 1,3 Symbol V CC, VCCQ Min 3.0 Max 3.6 Unit V Note 1


 

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