Details, datasheet, quote on part number: GM71VS64403CCL-6
PartGM71VS64403CCL-6
CategoryMemory => DRAM => EDO/FPM DRAM => 64 Mb => EDO/FP
Description
CompanyHynix Semiconductor
DatasheetDownload GM71VS64403CCL-6 datasheet
  

 

Features, Applications

Description

The GM71V(S)64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user. System oriented features include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The GM71V(S)64403C/CL offers Extended Data Out(EDO) Mode as a high speed access mode.

Features

* 16,777,216 Words x 4 Bit * Extended Data Out (EDO) Mode Capability * Fast Access Time & Cycle Time (Unit: ns)

*Power dissipation - Active 432mW/396mW(MAX) - Standby mW ( CMOS level : MAX 0.54mW ( L-Version : MAX) *EDO page mode capability *Access time : 50ns/60ns (max) *Refresh cycles - RAS only Refresh (GM71VS64403CL)(L_Version) *CBR & Hidden Refresh (GM71VS64403CL)( L-Version ) *4 variations of refresh -RAS-only refresh -CAS-before-RAS refresh -Hidden refresh -Self refresh (L-Version) *Single Power Supply 3.3V+/-10 % with a built-in VBB generator *Battery Back Up Operation ( L-Version ) Rev 0.1 / Apr' 01

Pin A0-A12 RAS CAS OE Function Address Inputs Refresh Address Inputs Row Address Strobe Column Address Strobe Output Enable Pin - I/O3 VCC VSS NC Function Write Enable Data Input / Output Power (+3.3V) Ground No Connection

Type No. GM71V(S)64403C/CLT-5 GM71V(S)64403C/CLT-6 Access Time Package 400 Mil 32Pin Plastic SOJ 400 Mil 32Pin Plastic TSOP II

Symbol TSTG VT VCC IOUT PT Parameter Storage Temperature (Plastic) Voltage on any Pin Relative to VSS Voltage on VCC Relative to VSS Short Circuit Output Current Power Dissipation Rating -0.5 to VCC + 0.5 (MAX 50 1.0 Unit mA W

*Note : Operation at or above Absolute Maximum Ratings can adversely affect device reliability.

Symbol VCC VSS VIH VIL TA Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Ambient Temperature under Bias Min Typ 3.3 0 Max 0.8 70 Unit Notes

Symbol VOH VOL ICC1 Parameter Output Level Output Level Voltage (IOUT = -2mA) Output Level Output Level Voltage (IOUT = 2mA) Operating Current (tRC = tRC min) 60ns ICC2 Standby Current (TTL interface) Power Supply Standby Current (RAS, CAS= VIH, DOUT = High-Z) RAS-Only Refresh Current ( tRC = tRC min) Extended Data Out page Mode Current (RAS = VIL, CAS, Address Cycling: tHPC = tHPC min) CMOS interface (RAS, CAS>=VCC-0.2V, DOUT = High-Z) Standby Current(L_Version) ICC6 CAS-before-RAS Refresh Current (tRC = tRC min) 50ns 60ns Min 2.4 0 Max VCC 2 mA Unit Note mA 1,2

Battery Back Up Operating Current(Standby with CBR) (tRC=31.25us,tRAS=300ns,Dout=High-Z) Standby Current (CMOS) Power Supply Standby Current RAS = VIH, CAS = VIL , DOUT = Enable Self Refresh Current (RAS, CAS <=0.2V,Dout=High-Z) Input Leakage Current, Any Input (0V<=VIN<=Vcc) Output Leakage Current (DOUT is Disabled, 0V<=VOUT<=Vcc)

Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Measured with one sequential address change per EDO cycle, tHPC. 0V<=VIL<=0.2V 5. L-Version


 

Related products with the same datasheet
GM71VS64403C/CL-5
GM71VS64403C/CL-6
GM71VS64403C/CLJ-5
GM71VS64403C/CLJ-6
GM71VS64403C/CLT-5
GM71VS64403C/CLT-6
GM71VS64403CCL
GM71VS64403CCL-5
Some Part number from the same manufacture Hynix Semiconductor
GM71VS64803C/CL-5
GM71VS65163C/CL-5
GM71VS65400CCL
GM71VS65403C/CL-5
GM71VS65800CCL
GM71VS65803C/CLJ-6
GM72V66441ELT 4 ,194 ,304 Word X 4BIT X 4BANK Synchronous Dynamicram
GM72V66841ELT 2,097,152 Word X 8 Bit X 4 Bank Synchronous Dynamic RAM
GM76C256C 32Kx8bit CMOS SRAM
GM76C256CL-W
GM76C256CLE 32Kx8bit CMOS SRAM
GM76C256CLFW-W
GM76C256CLL 32Kx8bit CMOS SRAM
GM76C256CLL-W
GM76C256CLLE 32Kx8bit CMOS SRAM
GM76C256CLLFW-W
GM76C256CLLT 32Kx8bit CMOS SRAM
GM76C256CLLT-W
GM76C256CLT 32Kx8bit CMOS SRAM
GM76C256CLT-W
GM76U256C 32Kx8bit CMOS SRAM

GMS30K.GSP : Remote Controller->Single Remote Controller 4-BIT Single Chip Microcomputers

HMS81024E : Remote Controller->Universal Remote Controller

HY57V28820AT-H : 4Banks X 4M X 8bits Synchronous DRAM

HY5V26CF : 4 Banks X 2M X 16bits Synchronous DRAM

HY628400A-I : 512Kx8bit CMOS SRAM

HY62U8100B-E : 128Kx8bit CMOS SRAM

HY62VT08081E-DT95I : 32Kx8bit CMOS SRAM

HYM72V16M656UT6 :

HYMD116725A8 : 128 MB 16Mx72 Bits Unbuffered DDR Sdram Dimm

HYMD216646AL6 : 128 MB 16Mx64 Bits Unbuffered DDR Sdram Dimm

HY27UF081G2M-VES : 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory

HY5V52FP-S : 4banks x 2M x 32bits Synchronous DRAM

 
0-C     D-L     M-R     S-Z