Details, datasheet, quote on part number: GM71VS18160
PartGM71VS18160
CategoryMemory => DRAM => EDO/FPM DRAM => 16 Mb
Description
CompanyHynix Semiconductor
DatasheetDownload GM71VS18160 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Description

The GM71V(S)18160C/CL is the new generation dynamic RAM organized x 16 bit. GM71V(S)18160C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)18160C/CL offers Fast Page Mode as a high speed access mode. Multiplexed address inputs permit the to be packaged in standard 400 mil 42pin plastic SOJ, and standard 400mil 44(50)pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.

Features

* 1,048,576 Words x 16 Bit Organization * Fast Page Mode Capability * Single Power Supply (3V+/-0.3V) * Fast Access Time & Cycle Time

* Low Power Active : 684/612/540/468mW (MAX) Standby : 7.2mW (CMOS level : MAX) 0.54mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 1024 Refresh * 1024 Refresh Cycles/128ms (L-version) * Self Refresh Operation (L-version) * Battery Back Up Operation (L-version) * 2 CAS byte Control

Address Inputs Refresh Address Inputs Data Input/ Data Output Row Address Strobe Column Address Strobe

Read/Write Enable Output Enable Power (+3.3V) Ground No Connection

Ambient Temperature under Bias Storage Temperature Voltage on any Pin Relative to VSS Supply Voltage Relative to VSS Short Circuit Output Current Power Dissipation

Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Supply Voltage Input High Voltage Input Low Voltage

Note: All voltage referred to Vss. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be on the same level.

Open Valid Open Undefined Valid Open

Standby Lower byte Upper byte Word Lower byte Upper byte Word Lower byte Upper byte Word Lower byte Upper byte Word CBR Refresh or Self Refresh (L-series) RAS-only Refresh cycle Read-modify -write cycle Delayed Write cycle Early write cycle Read cycle

Notes: 1. H: High (inactive) L: Low(active) L 2. tWCS 0ns Early write cycle tWCS 0ns Delayed write cycle 3. Mode is determined by the OR function of the UCAS and LCAS. (Mode is set by earliest of UCAS and LCAS active edge and reset by the latest of UCAS and LCAS inactive edge.) However write OPERATION and output High-Z control are done independently by each UCAS,LCAS. ex) if RAS to L, UCAS = H, LCAS = L, then CAS-before-RAS refresh cycle is selected.


 

Related products with the same datasheet
GM71VS18160C/CL-5
GM71VS18160C/CL-6
GM71VS18160C/CL-7
GM71VS18160CCL
GM71VS18160CCL-5
GM71VS18160CCL-6
GM71VS18160CJ/CLJ-5
GM71VS18160CJ/CLJ-6
GM71VS18160CJ/CLJ-7
GM71VS18160CT/CLT-5
GM71VS18160CT/CLT-6
Some Part number from the same manufacture Hynix Semiconductor
GM71VS18160C/CL-5
GM71VS18163
GM71VS64400CCL
GM71VS64403C/CL-5
GM71VS64803C/CL-5
GM71VS65163C/CL-5
GM71VS65400CCL
GM71VS65403C/CL-5
GM71VS65800CCL
GM71VS65803C/CLJ-6
GM72V66441ELT 4 ,194 ,304 Word X 4BIT X 4BANK Synchronous Dynamicram
GM72V66841ELT 2,097,152 Word X 8 Bit X 4 Bank Synchronous Dynamic RAM
GM76C256C 32Kx8bit CMOS SRAM
GM76C256CL-W
GM76C256CLE 32Kx8bit CMOS SRAM
GM76C256CLFW-W
GM76C256CLL 32Kx8bit CMOS SRAM
GM76C256CLL-W
GM76C256CLLE 32Kx8bit CMOS SRAM

GMS81524BK : Hyundai Micro Electronics 8-bit Single-chip Microcontrollers

HYM7V75A801BTFG-10P : ->Unbuffered DIMM 8Mx72 Bits PC100 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl, 4 Banks & 4K Refresh

HYMD512726A8J : 1 GB

HYMD525G726ALS4M-L : 2 GB

HY27UF161G2M-TMP : 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory

HY29DS162BT-12I : 16 Megabit (2M x 8/1M x 16) Super-low Voltage, Dual Bank, Simultaneous Read/write, Flash Memory

HY27LF161G2M-TCP : 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory

HY27SF161G2M-VIB : 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory

HYMP564U72P8-E3/C4 : 240pin DDR2 Sdram Unbuffered Dimms Based on 512 Mb 1st ver.

HY27SF081G2M-TIP : 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory

 
0-C     D-L     M-R     S-Z