Details, datasheet, quote on part number: GM71VS17803CJ/CLJ-6
PartGM71VS17803CJ/CLJ-6
CategoryMemory => DRAM => EDO/FPM DRAM => 16 Mb
Description
CompanyHynix Semiconductor
DatasheetDownload GM71VS17803CJ/CLJ-6 datasheet
  

 

Features, Applications

Description

The GM71V(S)17803C/CL is the new generation dynamic RAM organized x 8 bit. GM71V(S)17803C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17803C/CL offers Extended Data out(EDO) Page Mode as a high speed access mode. Multiplexed address inputs permit the to be packaged in standard 400 mil 28pin plastic SOJ, and standard 400mil 28pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.

Features

* 2,097,152 Words x 8 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (3.3V+/-0.3V) * Fast Access Time & Cycle Time (Unit: ns)

* Low Power Active : 396/360/324mW (MAX) Standby : 7.2mW (CMOS level : MAX) 0.36mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability *All inputs and outputs TTL Compatible * 2048 Refresh * 2048 Refresh Cycles/128ms (L-version) * Self Refresh Operation (L-version) * Battery Back Up Operation (L-version)

Address Inputs Refresh Address Inputs Data Input/ Data Output Row Address Strobe Column Address Strobe

Read/Write Enable Output Enable Power (+3.3V) Ground No Connection

Ambient Temperature under Bias Storage Temperature Voltage on any Pin Relative to VSS Supply Voltage Relative to VSS Short Circuit Output Current Power Dissipation

Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Supply Voltage Input High Voltage Input Low Voltage

Output Level Output "H" Level Voltage (IOUT = -2mA) Output Level Output "L" Level Voltage (IOUT = 2mA) Operating Current Average Power Supply Operating Current (RAS, CAS Cycling: tRC = tRC min) Standby Current (TTL) Power Supply Standby Current (RAS, CAS = VIH, DOUT = High-Z) RAS Only Refresh Current Average Power Supply Current RAS Only Refresh Mode (tRC = tRC min) EDO Page Mode Current Average Power Supply Current EDO Page Mode (tHPC = tHPC min) Standby Current (CMOS) Power Supply Standby Current (RAS, CAS >VCC - 0.2V, DOUT = High-Z) CAS-before-RAS Refresh Current (tRC = tRC min) 60ns 70ns

Battery Back Up Operating Current(Standby with CBR Ref.) (CBR refresh, tRC= 62.5us, tRAS<= 0.3us, DOUT=High-Z, CMOS Interface) Standby Current RAS = VIH CAS = VIL DOUT = Enable Self-Refresh Mode Current (RAS, CAS<= 0.2V, DOUT=High-Z, CMOS interface) Input Leakage Current Any Input (0V<= VIN<= 4.6V) Output Leakage Current (DOUT is Disabled, 0V<= VOUT<= 4.6V)

Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while CAS = VIH. 4. CAS L (<=0.2V) while RAS 5. L -version.


 

Related products with the same datasheet
GM71VS17400
GM71VS17803
GM71VS17803C/CL-5
GM71VS17803C/CL-6
GM71VS17803C/CL-7
GM71VS17803CCL
GM71VS17803CCL-5
GM71VS17803CCL-6
GM71VS17803CJ/CLJ-5
GM71VS17803CJ/CLJ-7
GM71VS17803CT/CLT-5
Some Part number from the same manufacture Hynix Semiconductor
GM71VS17803CJ/CLJ-7
GM71VS18160
GM71VS18163
GM71VS64400CCL
GM71VS64403C/CL-5
GM71VS64803C/CL-5
GM71VS65163C/CL-5
GM71VS65400CCL
GM71VS65403C/CL-5
GM71VS65800CCL
GM71VS65803C/CLJ-6
GM72V66441ELT 4 ,194 ,304 Word X 4BIT X 4BANK Synchronous Dynamicram
GM72V66841ELT 2,097,152 Word X 8 Bit X 4 Bank Synchronous Dynamic RAM
GM76C256C 32Kx8bit CMOS SRAM
GM76C256CL-W
GM76C256CLE 32Kx8bit CMOS SRAM

GMS81008 : Remote Controller->Universal Remote Controller

HY5PS1G821LM-E4 : DDR2 Sdram - 1Gb

HY5V66GF-P : 4 Banks X 1M X 16Bit Synchronous DRAM

HYMA6V32730E14HGTG-6 : 32Mx72 Buffered Edo DRAM Dimm

HYMD212G726LS4 : 1 GB 128Mx72 Bits Registered DDR Sdram Dimm

HY5DU12422CLTP : 512mb DDR Sdram

HY57V641620ET-6 : 4 Banks x 2M x 8Bit Synchronous DRAM

HY27LF081G2M-VIP : 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory

 
0-C     D-L     M-R     S-Z