Details, datasheet, quote on part number: HJ50
PartHJ50
CategoryDiscrete => Transistors => Bipolar
Description
CompanyHi-Sincerity Microelectronics Corp.
DatasheetDownload HJ50 datasheet
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Some Part number from the same manufacture Hi-Sincerity Microelectronics Corp.
HJ649A Emitter to Base Voltage:5V 1.5A PNP Epitaxial Planar Transistor For Low Frequency Power Amplifier
HJ6668 Emitter to Base Voltage:5V 10A PNP Epitaxial Planar Transistor For General-purpose Amplifier And Switching Applications
HJ667A Emitter to Base Voltage:5V 1A NPNP Epitaxial Planar Transistor For Low Frequency Power Amplifier
HJ669A Emitter to Base Voltage:5V 1.5A NPN Epitaxial Planar Transistor For Low Frequency Power Amplifier
HJ6718 Emitter to Base Voltage:5V 1A NPN Epitaxial Planar Transistor For General Purpose Medium Power Amplifier And Switching
HJ772 Emitter to Base Voltage:5V 3A PNP Epitaxial Planar Transistor For Using in Output Stage of 20W Audio Amplifier, Voltage Regulator, DC-DC Converter And Relay Driver
HJ882 Emitter to Base Voltage:5V 3A NPN Epitaxial Planar Transistor For Using in Output Stage of 20W Audio Amplifier
HLB120A Emitter to Base Voltage:6V; NPN Triple Diffused Planar Type High Voltage Transistor For Use in Switching Applications
HLB1211 NPN Triple Diffused Planar Type High Voltage Transistors
HLB121I Emitter to Base Voltage:6V; NPN Triple Diffused Planar Type High Voltage Transistor For Use in Switching Applications
HLB121J
HLB122I
HLB122J
HLB122T
HLB123D Emitter to Base Voltage:8V; NPN Epitaxial Planar Transistor
HLB123I
HLB123T
HLB124E Emitter to Base Voltage:8V; NPN Epitaxial Planar Transistor For High Voltage, High Speed Switching Inductive Circuit And Amplifier Applications
HLB125E Emitter to Base Voltage:9V; NPN Epitaxial Planar Transistor For Light Applications And Low Switch-mode Power Suppies
HM1300 Emitter to Base Voltage:20V; Silicon PNP Epitaxial Transistor
HM14

H2N3417 : 500mA NPN Silicon Transistor For Small Signal General Purpose And Switching Applications

HBC337 : 5V 800mA NPN Epitaxial Planar Transistor For Driver And Output-stage of Audio Amplifier

HBZX55C11 :

HMM5245B :

HMM5258B : Zener Diodes

HMM55C12 :

HPH2369 : Emitter to Base Voltage:4.5V 500mA NPN Epitaxial Planar Transistor For General Purpose Switching And Amplifier Applications

HSB507 : Emitter to Base Voltage:5V 3A PNP Epitaxial Planar Transistor

HLB121A : NPN Triple Diffused Planar Type High Voltage Transistor

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FB25 : IF(A) = 25 ;; Ifsm (A) = 300 ;; VRRM (V) = 50 1000. Metal heat sink Epoxy case Metal heat sink Epoxy case Glass Passivated Junction UL recognized under component index file number E130180 Terminals: FASTON Terminals: WIRE LEADS Max. Mounting Torque: x cm Lead and polarity identifications High surge current capability FB2500L FB2501L VRRM VRMS VR IF(AV) Peak Recurrent Reverse Voltage (V) Maximum RMS Voltage.

FQU13N10 : Enhancement N-Channel. 100V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

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