|Category||Discrete => Thyristors => Triacs|
|Datasheet||Download BCR3AS-12 datasheet
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.Renesas Technology Corp. Customer Support Dept. April 1, 2003
Refer to the page as to the product guaranteed maximum junction temperature 150°C
IT (RMS)........................................................................ 3A VDRM....................................................................... 600V IFGT IRGT (10mA) 5 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 600 720 Unit V
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Tc=108°C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state currentRefer to the page as to the product guaranteed maximum junction temperature 150°C
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage Gate trigger current Tj=125°C, VD=1/2VDRM Junction to case 3 Tj=125°CTest conditions Tj=125°C, VDRM applied Tc=25°C, ITM=4.5A, Instantaneous measurement RL=6, RG=330
2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 terminal. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT10mA) is also available. (IGT item1)Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=1.5A/ms 3. Peak off-state voltage VD=400V
|Some Part number from the same manufacture Renesas|
|BIC701C Bias Controlled Monolithic ic VHF/uhf RF Amplifier|
|BIC801M Bias Controlled Monolithic ic VHF/uhf RF Amplifier|
HZU30L3 : Diodes for Constant Voltage
M38064MFXXXFP : Single-chip 8-bit CMOS Microcomputer
M38037F1L-XXXKP : Single-chip 8-bit CMOS Microcomputer
HD6432147SW : Hitachi 16-bit Single-chip Microcomputer
M38D27FBXXXHP : Single-chip 8-bit CMOS Microcomputer
HD74HC10FP-E : HC/UH SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO14 Specifications: Flip-Flop Type: J-K ; Triggering: Negative-edge Triggered ; Supply Voltage: 4.5 ; Output Characteristics: Complementary Output ; Propagation Delay: 190 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Package Type: FP-14DA ; Logic Family: CMOS ; Number of Pins: 14
HD74LS175FPEL : LS SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO14 Specifications: Flip-Flop Type: J-K ; Triggering: Negative-edge Triggered ; Supply Voltage: 5V ; Output Characteristics: Complementary Output ; Propagation Delay: 20 ns ; fMAX: 30 MHz ; Operating Temperature: -20 to 75 C (-4 to 167 F) ; Package Type: FP-14DA ; Logic Family: TTL ; Number of Pins: 14
HM6216514LTTI-5SL : 512K X 16 STANDARD SRAM, 55 ns, PDSO44 Specifications: Memory Category: SRAM Chip ; Density: 8389 kbits ; Number of Words: 512 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 INCH, PLASTIC, TSOP2-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 55 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F)
HZS7C3TD-E : 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 Specifications: Diode Type: VOLTAGE REGULATOR DIODE
M30291FCHPU7 : 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 20 MHz ; ROM Type: Flash ; Supply Voltage: 3 to 5.5 volts ; I/O Ports: 55 ; Package Type: LFQP, Other, 10 X 10 MM, 0.50 MM PITCH, PLASTIC, LQFP-64 ; Pin Count: 64 ; Operating Temperature: -20 to 85 C (-4 to 185 F) ; Features: DMA, PWM
RD16MB2 : 16.18 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Specifications: Diode Type: VOLTAGE REGULATOR DIODE
UPD789860MC(A)-XXX-5A4-A : 8-BIT, MROM, 6 MHz, MICROCONTROLLER, PQFP44 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 6 MHz ; ROM Type: MROM ; Supply Voltage: 4 to 5.5 volts ; I/O Ports: 31 ; Package Type: LFQP, Other, 10 X 10 MM, PLASTIC, LQFP-44 ; Operating Range: Industrial ; Pin Count: 44 ; Operating Temperature: -40 to 85 C (-40 to 185 F)
2A01G : Glass Passivated. Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 2 ;; Ifsm (A)= 55.
2SA1290 : PNP Epitaxial Planar Silicon Transistor, 60V/7A, High-speed Driver Application.
2SA1773 : PNP Epitaxial Planar Silicon Transistor.
30CTQ050 : 50V 30A Schottky Common Cathode Diode in a TO-220AB Package. IF(AV) Rectangular waveform VRRM IFSM 5 µs sine @ 15 Apk, = 125°C (per leg) range A V A This center tap Schottky rrectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation 150° C junction temperature. Typical applications are in switching power supplies, converters,.
62CNQ030 : 5 to 100 Amp. Schottky Rectifier 60 Amp. IF(AV) Rectangular waveform VRRM IFSM 5 µs sine @ 30 Apk, = 125°C (per leg) 150 °C The 62CNQ030 center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation 150 °C junction temperature. Typical applications are in switching power supplies,.
APT6017LLL : 600V, 35A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
BU2515DF : Switching. Silicon Diffused Power Transistor. New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors. SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector.
BYM26 : BYM26 Series; Fast Soft-recovery Controlled Avalanche Rectifiers. BYM26 series Fast soft-recovery controlled avalanche rectifiers Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack Also available with preformed leads for easy insertion. Rugged glass SOD64 package, using a high temperature alloyed construction.
MBR1550CT : 5 to 100 Amp. 15 Ampere Schottky Barrier Rectifiers. Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guarding for over voltage protection. 1535 Maximum Repetitive Reverse Voltage Average Rectified.
MJ2501 : Screening Options Available = ;; Polarity = PNP ;; Package = TO3 (TO204AA) ;; Vceo = 80V ;; IC(cont) = 10A ;; HFE(min) = 1000 ;; HFE(max) = - ;; @ Vce/ic = 3V / 5A ;; FT = 1MHz ;; PD = 150W.
SD101BW : Schottky Diode. For general purpose applications The SD101 series is a Metal-on-silicon Schottky barrier device which is protected a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available.
KL731ELBK10NG : 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Rated DC Current: 300 milliamps ; Operating Temperature: -40 to 125 C (-40 to 257 F).
KV1770RTL-G : 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE. s: Arrangement: Common Catode ; Diode Type: VARIABLE CAPACITANCE DIODE ; VBR: 18 volts ; CT: 5 to 70 pF ; Package: LEAD FREE PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.
MBRF15100CT-G : 15 A, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 15000 mA ; RoHS Compliant: RoHS ; Package: GREEN, PLASTIC, ITO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.
THS10R33J : RESISTOR, WIRE WOUND, 10 W, 5 %, 50 ppm, 0.33 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 0.3300 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 50 Â±ppm/Â°C ; Power Rating: 10 watts (0.0134 HP) ; Standards and Certifications:.