|Category||Discrete => Thyristors => Triacs|
|Datasheet||Download BCR1AM-12 datasheet
|Cross ref.||Similar parts: Z0107MA, BT131-600D, Z0107MAG, Z0109MA1AA2, Z0107MA1AA2, Z0107MA2AL2, Z0109MA2AL2, Z0103MA1AA2, Z0103MA2AL2|
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.Renesas Technology Corp. Customer Support Dept. April 1, 2003
APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 600 720 Unit V
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, 3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage Gate trigger current Tj=125°C, VD=1/2VDRM Junction to case 3 Tj=125°CTest conditions Tj=125°C, VDRM applied Tc=25°C, ITM=1.5A, Instantaneous measurement
2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 3mA) is also available. (IGT item 1) Test conditions Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=0.5A/ms 3. Peak off-state voltage VD=400V
|Some Part number from the same manufacture Renesas|
|BIC701C Bias Controlled Monolithic ic VHF/uhf RF Amplifier|
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