Details, datasheet, quote on part number: MB84VD2218xEE-85
PartMB84VD2218xEE-85
CategoryMemory => Multi Chip Memory
Description
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload MB84VD2218xEE-85 datasheet
  

 

Features, Applications

Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM

Power Supply Voltage 3.3 V High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (SRAM) Operating Temperature to +85 C Package 73-ball BGA

Flash Memory Power Supply Voltage (V) Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) VCCf* 85 35

* : Both VCCf and VCCs must be in recommended operation range when either part is being accessed.

1.FLASH MEMORY Simultaneous Read/Write Operations (Dual Bank) Multiple devices available with different bank sizes Host system can program or erase in one bank, then immediately and simultaneously read from the other bank. Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 Write/Erase Cycles Sector Erase Architecture Eight 4 K words and sixty three 32 K words Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture MB84VD2218X: Top sector MB84VD2219X: Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready-Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion Automatic Sleep Mode When addresses remain stable, automatically switch themselves to low power mode. Low VCCf Write Prohibition 2.5 V Hidden ROM (Hi-ROM) Region 64 K byte of Hi-ROM, accessible through a new "Hi-ROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) WP/ACC Input Pin Allows protection of boot sectors at VIL, regardless of sector protection/unprotection status. (MB84VD2218XEB/EE:SA69,SA70 MB84VD2219XEB/EE:SA0,SA1) Allows removal of boot sector protection at VIH. Program time will reduce 40% at VACC. Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device Please refer "MBM29DL32XTE/BE" in datasheet for detailed functions 2.SRAM Power Dissipation Operating 40 mA Max. Standby 7 A Max. Power down features using CE1s and CE2s Data Retention Supply Voltage: V CE1s and CE2s Chip Select Byte Data Control: to DQ15)


 

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