Details, datasheet, quote on part number: MB84VD22091EA-90-PBS
PartMB84VD22091EA-90-PBS
CategoryMemory => Flash
Description32m ( X 8/x16 ) Flash Memory & 2m ( X 8/x16 ) Static RAM
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload MB84VD22091EA-90-PBS datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM

Power supply voltage to 3.3V High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) Operating Temperature to +85C Package 73-ball FBGA

Flash Memory Ordering Part No. VCCf, VCCs 3.0 V
Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns)

Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 write/erase cycles Sector erase architecture Eight 4 K words and sixty three 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture MB84VD2208XEA: Top sector MB84VD2209XEA: Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. Low VCCf write inhibit 2.5 V Hidden ROM (Hi-ROM) region 64K byte of Hi-ROM, accessible through a new "Hi-ROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) WP/ACC input pin At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status MB84VD2209XEA:SA0,SA1) At VIH, allows removal of boot sector protection At VACC, program time will reduse by 40%. Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device Please refer to "MBM29DL32XTE/BE" data sheet in detailed function

Power dissipation Operating 40 mA max. Standby 7 A max. Power down features using CE1s and CE2s Data retention supply voltage: V CE1s and CE2s Chip Select Byte data control: LBs to DQ15)

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.




 

Related products with the same datasheet
MB84VD22092EA
Some Part number from the same manufacture Fujitsu Microelectronics, Inc.
MB84VD22092EA 32m ( X 8/x16 ) Flash Memory & 2m ( X 8/x16 ) Static RAM
MB84VD22092EA-90-PBS
MB84VD22094EA
MB84VD2209XEA-90
MB84VD2209XEA-90 CMOS 32m (x8/x16) Flash Memory & 2m (x8/x16) Static RAM
MB84VD22181EC 32m ( X 8/x16 ) Flash Memory & 4m ( X 8/x16 ) Static RAM
MB84VD2218XA-10 CMOS 32m (x 8/x16) Flash Memory & 4m (x 8/x16) Static RAM
MB84VD2218xEB-85
MB84VD2218XEC 32m ( X 8/x16 ) Flash Memory & 4m ( X 8/x16 ) Static RAM
MB84VD2218XEC-90
MB84VD2218XEC-90 CMOS 32m (x8/x16) Flash Memory & 4m (x8/x16) Static RAM
MB84VD2218xEE-85
MB84VD2218XEE-90
MB84VD2218XEE-90 CMOS 32m (x8/x16) Flash Memory & 4m (x8/x16) Static RAM
MB84VD2218XEG 32m ( X 8/x16 ) Flash Memory & 4m ( X 8/x16 ) Static RAM
MB84VD2218XEG-90
MB84VD2218XEG-90 Stacked MCP (multi-chip Package) Flash Memory & SRAM CMOS: 32m (x8/x16) Flash Memory & 4m (x8/x16) Static RAM
MB84VD2218XEH-90
MB84VD2218XEH-90 Stacked MCP (multi-chip Package) Flash Memory & SRAM CMOS: 32m (x8/x16) Flash Memory & 4m (x8/x16) Static RAM
MB84VD22191EC 32m ( X 8/x16 ) Flash Memory & 4m ( X 8/x16 ) Static RAM

FAR-C4CN-04194-L00-R : Piezoelectric Resonator ( 4 to 23.9 MHZ )

FAR-M3DC : Piezoelectric Vco ( 6 to 30 MHZ )

MB15C100PV1 : if Band PLL Frequency Synthesizer

MB88101A : CMOS A/D Converter (with 4-channel Input at 12-bit Resolution)

MB89PV160 :

MZ-18WHS- :

MB90F949A : 16-bit Proprietary Microcontroller

MB89P485-103P-SH : 8-bit Proprietary Microcontroller

MB82D01161-85LPBN : 1M X 16 STANDARD SRAM, 85 ns, PBGA48 Specifications: Memory Category: SRAM Chip ; Density: 16777 kbits ; Number of Words: 1000 k ; Bits per Word: 16 bits ; Package Type: 0.75 MM PITCH, PLASTIC, FBGA-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 85 ns ; Operating Temperature: -30 to 85 C (-22 to 185 F)

MB89P558A-202PFT : MICROCONTROLLER, PQFP100 Specifications: Life Cycle Stage: ACTIVE ; Package Type: LFQP, Other, 14 X 14 MM, 1.70 MM HEIGHT, 0.50 MM PITCH, PLASTIC, LQFP-100 ; Pin Count: 100

MB95F282KPH : 8-BIT, FLASH, MICROCONTROLLER, PDSO16 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 16.25 MHz ; ROM Type: Flash ; Supply Voltage: 2.4 to 5.5 volts ; I/O Ports: 12 ; Package Type: SOP, Other, 5.30 X 10.15 MM, 1.27 MM PITCH, PLASTIC, SOP-16 ; Pin Count: 16

 
0-C     D-L     M-R     S-Z