Details, datasheet, quote on part number: MB84VD21092
PartMB84VD21092
CategoryMemory => Flash
Description16m ( X8/x16 ) Flash Memory & 2m ( X8/x16 ) Static RAM
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload MB84VD21092 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM

Power supply voltage 3.6 V High performance 85 ns maximum access time Operating Temperature to +85 C Package 61-ball FBGA, 56-pin TSOP(I)

Flash Memory Ordering Part No. VCCf, VCCs -0.3 V
Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns)

Simultaneous Read/Write operations (dual bank) Miltiple devices available with different bank sizes Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 write/erase cycles Sector erase architecture Eight 4 K words and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture MB84VD2108X : Top sector MB84VD2109X : Bottom sector Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. Low VCCf write inhibit 2.5 V Hidden ROM (Hi-ROM) region 64K byte of Hi-ROM, accessible through a new "Hi-ROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) WP/ACC input pin At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status SA1) At VIH, allows removal of boot sector protection At VACC, program time will reduse by 40%. Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device Please refer to "MBM29DL16XTD/BD" data sheet in detailed function

Power dissipation Operating: 50 mA max. Standby: 7 A max. Power down features using CE1s and CE2s Data retention supply voltage V CE1s and CE2s Chip Select Byte data control : LBs DQ7) , UBs * : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.




 

Related products with the same datasheet
MB84VD21092-85-PBS
MB84VD21092-85-PTS
Some Part number from the same manufacture Fujitsu Microelectronics, Inc.
MB84VD21092-85-PBS 16m ( X8/x16 ) Flash Memory & 2m ( X8/x16 ) Static RAM
MB84VD21093
MB84VD21094
MB84VD2109X
MB84VD2109X-85 CMOS 16m (x 8/x16) Flash Memory & 2m (x 8/x16) Static RAM
MB84VD2109XEM-70 Single 3V
MB84VD21181 16m ( X 8/ X 16 ) Flash Memory & 4m ( X 8/ X 16 ) Static RAM
MB84VD21182
MB84VD21183
MB84VD21184
MB84VD2118XA
MB84VD2118XA-85 CMOS 16m (x 8/x16) Flash Memory & 4m (x 8/x16) Static RAM
MB84VD21191 16m ( X 8/ X 16 ) Flash Memory & 4m ( X 8/ X 16 ) Static RAM
MB84VD21192
MB84VD21193
MB84VD21194
MB84VD2119XA-85 CMOS 16m (x 8/x16) Flash Memory & 4m (x 8/x16) Static RAM
MB84VD22081EA 32m ( X 8/x16 ) Flash Memory & 2m ( X 8/x16 ) Static RAM
MB84VD22082EA
MB84VD22083EA
MB84VD22084EA

1MBH50-060 : Modeled Package Fuji Discrete Package Igbt

FAR-C3SB-12000-K11-T : Piezoelectric Resonator

FAR-C4SA-03580-L01-T : Piezoelectric Resonator

MB89538HCPFV : Uart Product

MB89673PF : CISC->MB 8-bit Proprietary Microcontroller CMOS F2mc-8l Mb89670/a Series

MB90F346S : Proprietary F2MC-16LX Family CAN Controller Products

VB-18M :

MB89P485-104PFM : 8-bit Proprietary Microcontroller

FAR-F6CE-1G9600-L2XK-U : SAW FILTER Specifications: Filter Design: Saw Filter

MB9BF412NPMC : RISC MICROCONTROLLER Specifications: Life Cycle Stage: ACTIVE

PG905C4RR : 20 A, 400 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 20000 mA ; Package: PLASTIC, TO-3PF, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2

Same catergory

A29DL324TG-90 : 90ns 2.7-3.6V 32M-bit CMOS Low Voltage Dual Operation Flash Memory. 32M-Bit CMOS Low Voltage Dual Operation Flash Memory n Two bank organization enabling simultaneous execution of erase / program and read n Bank organization: 2 banks (16 Mbits + 16 Mbits) n Memory organization: - 4,194,304 words x 8 bits (BYTE mode) - 2,097,152 words x 16 bits (WORD mode) n Sector organization: 71 sectors (8 Kbytes / 4 Kwords 8 sectors,.

AT27C4096-55 : 4-megabit 256k X 16 OTP EPROM. Fast Read Access Time - 55 ns Low Power CMOS Operation 100 A Maximum Standby 40 mA Maximum Active at 5 MHz JEDEC Standard Packages 40-Lead 600 mil PDIP 44-Lead PLCC 40-Lead TSOP x 14 mm) Direct Upgrade from 512K bit, 1M bit, and 2M bit (AT27C516, AT27C1024, and AT27C2048) EPROMs 10% Power Supply High Reliability CMOS Technology 2,000V ESD Protection.

CY7C1339B : 128K X 32 Synchronous Pipelined Cache RAM. Supports 100-MHz bus for Pentium and PowerPC operations with zero wait states Fully registered inputs and outputs for pipelined operation 32 common I/O architecture 3.3V core power supply / 3.3V I/O operation Fast clock-to-output times 3.5 ns (for 166-MHz device) 4.0 ns (for 133-MHz device) 5.5 ns (for 100-MHz device) User-selectable burst counter.

GS74108A : . GS74108ATP/J/X SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Fast access time: ns CMOS low power operation: mA at minimum cycle time Single 3.3 V power supply All inputs and outputs are TTL-compatible Fully static operation Industrial Temperature Option: to 85C Package line J: 400 mil, 36-pin SOJ package TP: 400 mil, 44-pin TSOP Type II package.

HN58X2532FPI : . Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

HYM72V16636BLT6 : ->Unbuffered DIMM. based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh The Hynix HYM72V16636B(L)T6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 168pin glass-epoxy printed circuit board. Two 0.22uF and one 0.0022uF decoupling capacitors.

KM44C16100CK : = KM44C16100CK 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ;; Organization = 16Mx4 ;; Mode = Fast Page ;; Voltage(V) = 5 ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; Package = 32SOJ,32TSOP2 ;; Power = Normal ;; Production Status = Eol ;; Comments = -.

M25P05 : Serial Flash for Code Storage. Not For Design - 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHZ Spi Bus Interface.

M372F0410DB0 : Buffered DIMM. = M372F0410DB0 4Mx72 DRAM Dimm With Ecc Using 4Mx4,4K&2K Refresh,3.3V ;; Density(MB) = 32 ;; Organization = 4Mx72 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (4Mx4)x18+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered.

M372F1680ET0 : Buffered DIMM. = M372F1680ET0 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Mode = Edo ;; Refresh = 8K ;; Speed(ns) = C50,C60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)x18+EEPROM ;; Production Status = Eol ;; Comments = -.

M41T11 : Serial RTC. 512 Bit (64B X 8) Serial Access Timekeeper SRAM. COUNTERS FOR SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY YEAR 2000 COMPLIANT SOFTWARE CLOCK CALIBRATION AUTOMATIC SWITCH-OVER and DESELECT CIRCUITRY I2C BUS COMPATIBLE 56 BYTES of GENERAL PURPOSE RAM ULTRA-LOW BATTERY SUPPLY CURRENT OF 1A LOW OPERATING CURRENT OF 300A BATTERY OR SUPER-CAP BACK-UP BATTERY BACK-UP NOT RECOMMENDED FOR 3.0V.

MT46V64M8 : 512Mb: x8 DDR400 Sdram, Addendum, 66-pin Tsop. 200 MHz Clock, 400 Mb/s/p data rate Low Latency (3-3-3) VDD +2.60V 0.10V VDDQ +2.60V 0.10V Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each.

N04M163WL1A : Medical SRAM. 4Mb, , 256K X 16, 2.3 - 3.6, 85, Medical Level 1 Processing, 48-BGA, 44-TSOP 2, Kgd,.

K7N641845M : 4Mx18Bit Pipelined NtRAM The K7N641845M is 75,497,472-bits Synchronous Static SRAMs. The NtRAM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must.

M395T2863FB4-CE68 : 128M X 72 DDR DRAM, DMA204. s: Memory Category: DRAM Chip ; Density: 9663676 kbits ; Number of Words: 128000 k ; Bits per Word: 72 bits ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 ; Pins: 204 ; Supply Voltage: 1.8V ; Operating Temperature: 0 to 95 C (32 to 203 F).

P2112 : 256 X 4 STANDARD SRAM, 1000 ns, PDIP16. s: Memory Category: SRAM Chip ; Density: 1 kbits ; Number of Words: 256 k ; Bits per Word: 4 bits ; Package Type: DIP, PLASTIC, DIP-16 ; Pins: 16 ; Supply Voltage: 5V ; Access Time: 1000 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

WMF2M8-120DLC5A : 2M X 8 FLASH 5V PROM, 120 ns, CDSO44. s: Memory Category: Flash, PROM ; Density: 16777 kbits ; Number of Words: 2000 k ; Bits per Word: 8 bits ; Package Type: SOJ, CERAMIC, SOJ-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 120 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

 
0-C     D-L     M-R     S-Z