Details, datasheet, quote on part number: MB84VD2108XEM-70
PartMB84VD2108XEM-70
CategoryMemory => Multi Chip Memory => 2-Stacked MCP
Title2-Stacked MCP
DescriptionSingle 3V
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload MB84VD2108XEM-70 datasheet
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Features, Applications

Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM

Power Supply Voltage 3.3 V High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM) Operating Temperature to +85 C Package 56-ball BGA

Part No. Supply Voltage(V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MB84VD2108XEM/MB84VD2109XEM VCCf= 70 30

Note: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.

FLASH MEMORY Simultaneous Read/Write Operations (Dual Bank) Miltiple devices available with different bank sizes (Please refer to ORDERING INFORMATION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 Write/Erase Cycles Sector Erase Architecture Eight 4 K words and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture MB84VD2108XEM: Top sector MB84VD2109XEM: Bottom sector Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion Ready-Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion Automatic Sleep Mode When addresses remain stable, automatically switch themselves to low power mode. Low VCC Write Inhibit 2.5 V HiddenROM Region 64K byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) WP/ACC Input Pin At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status MB84VD2109XEM:SA0,SA1) At VIH, allows removal of boot sector protection At VACC, program time will reduse by 40%. Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device Please refer to "MBM29DL16XTE/BE" Datasheet in Detailed Function * : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. SRAM Power Dissipation Operating 40 mA Max Standby 7 A Max Power Down Features using CE1s and CE2s Data Retention Supply Voltage: V CE1s and CE2s Chip Select Byte Data Control: to DQ8)

* : There is no solder ball. This land should be open electrically.

 

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