Details, datasheet, quote on part number: MB84VD2008
PartMB84VD2008
CategoryMemory
Description8m ( X 16 ) Flash Memory & 2m ( X 16 ) Static RAM
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload MB84VD2008 datasheet
  

 

Features, Applications

Power supply voltage 3.6 V High performance 100 ns maximum access time Operating Temperature to +85C FLASH MEMORY Simultaneous operations Read-while Erase or Read-while-Program Minimum 100,000 write/erase cycles Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture MB84VD2008: Top sector MB84VD2009: Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. Low VCC write inhibit 2.5 V Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device Please refer to "MBM29DL800TA/BA" data sheet in detailed function SRAM Power dissipation Operating 50 mA max. Standby 50 A max. Data retention supply voltage: 3.6 V

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

Function Address Inputs (Common) Address Input (Flash) Data Inputs/Outputs (Common) Chip Enable (Flash) Chip Enable (SRAM) Output Enable (Common) Write Enable (Common) Ready/Busy Outputs (Flash) Upper Byte Control (SRAM) Lower Byte Control (SRAM) Hardware Reset Pin/Sector Protection Unlock (Flash) No Internal Connection Device Ground (Common) Device Power Supply (Flash) Device Power Supply (SRAM)


 

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